Samsung Electronics Co., Ltd.

Adeka Corporation

Dnf Co., Ltd.

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Techno Semichem Co., Ltd.

Jae-Soon Lim

Youn-Joung Cho

Youn-soo Kim

Sung-Tae Kim

Young-sun Kim

Seung-Hwan Lee

Ki-chul Kim

Gyu-Hee Park

Suk-Jin Chung

Naoki Yamada

Jae-hyoung Choi

Sang-Yeol Kang

Min-Young Park

Kyu-Ho Cho

Myong-Woon Kim

Sang-Ick Lee

Sang-in Lee

Han-Mei Choi

Seung-min Ryu

Han-jin Lim

Young-Geun Park

Gab-Jin Nam

Yeong-kwan Kim

Tsubasa Shiratori

Haruyoshi Sato

Kang-yong Lee

Sung-Woo Cho

Jin-il Lee

Ki-yeon Park

Heung-soo Park

Takanori Koide

Hiroyuki Uchiuzou

Chang-Woo Sun

Jong-wan Kwon

Gab-jin Nam

Ji-Eun Yun

Jung-Hyun Lee

Young-wook Park

Joo-ho Lee

Wan-don Kim

Hong-bae Park

Jin-Yong Kim

Cha-Young Yoo

Yun-Jung Lee

Young-Sun Kim

Byung-Soo Kim

Kwang-Hee Lee

Bong-hyun Kim

Hyun-jun Kim

Kyoung-Seok Kim

Julien Lieffrig

Jin-sun Lee

Jae-Sun Jung

Kazuki Harano

Sang-yong Jeon

Sung-Je Choi

Youn-Soo Kim

Seung-Ho Yoo

Clement Lansalot

Thomas Jongwan Kwon

Won-tae Noh

Sung-duck Lee

An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, 

Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): 

Method of forming tin-containing material film and method of synthesizing a tin compound

A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Method of forming a thin film

A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I): 

Tantalum compound

A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

Method of forming thin film and method of manufacturing integrated circuit device using the same

Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1):Nb(RCp)(L)&#x2003;&#x2003;Formula (1)

Methods of forming thin film and fabricating integrated circuit device using niobium compound

Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device. 

Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same

An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same

To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.

Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same

Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand.

Method of fabricating semiconductor device

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Seoul, South Korea

Jae-Soon Lim