Hynix Semiconductor Inc.

Skhynix Inc.

Korea Institute of Science and Technology

Tong Yang Nylon Co., Ltd.

Jae Soo Kim

Cheol Hwan Park

Ho Jin Cho

Dong Kyun Lee

Byung Joo Kim

Ji Young Byun

Jong Chul Shin

Jin-Kook Yoon

Kyeung Ho Kim

Doo Yong Kim

Jong Kown Lee

Jae Chun Cha

Dae Ho Rho

Jong Sun Yoon

A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a bit line contact plug that is coupled to the active region and that includes a first ion implantation region buried in a first inner void, and a storage node contact plug that is coupled to the active region and includes a second ion implantation region buried in a second inner void. Although the semiconductor device is highly integrated, a contact plug is buried to prevent formation of a void, so that increase in contact plug resistance is prevented, resulting in improved semiconductor device characteristics.

Semiconductor device and method for forming the same

A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.

Laser annealing method for manufacturing semiconductor device

A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

Capacitor having tapered cylindrical storage node and method for manufacturing the same

Forming a capacitor of a semiconductor device includes forming an interlayer dielectric having holes over a semiconductor substrate. A conductive layer is then formed on surfaces of the holes and on the upper surface of the interlayer dielectric. A silicon-containing conductive layer is formed by flowing a silicon source gas for the semiconductor substrate formed with the conductive layer, so that silicon atoms can penetrate into the conductive layer. The silicon-containing conductive layer prevents etchant from infiltrating the interlayer dielectric below the silicon-containing conductive layer.

Method for forming capacitor of semiconductor device

A MoSi&#x2014;SiNcomposite coating which is coated on a surface of base materials. The MoSi&#x2014;SiNcomposite coating on the surface of the base material can be formed by forming a MoN diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi&#x2014;SiNcomposite coating by vapor-depositing of silicon on the surface of the MoN diffusion layer, or the MoSi&#x2014;SiNcomposite coating on the surface of the base material can be formed by forming a MoSidiffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSidiffusion layer into a MoSidiffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a MoSi&#x2014;SiNcomposite diffusion layer by vapor-depositing of nitrogen on the surface of the MosSidiffusion layer by the CVD method and forming a MoSi&#x2014;SiNcomposite coating by vapor-depositing of silicon on the surface of the MoSi&#x2014;SiNcomposite diffusion layer.

[object Object]

A cleansing fabric and a method for manufacturing cleansing fabric wherein in the method, separative type ultrafine fiber and highly shrinkable polyester fiber are circular knitted or interlaced such that the highly shrinkable polyester fiber is interposed between the separative ultrafine fibers to obtain a three-layered knitted structure and subjecting the three-layered structure to dyeing. The separative type ultrafine fiber is obtained by conjugate spinning of hydrophilic nylon and lipophilic polyester.

Cleansing fabric and method for manufacturing the same

Growing community of inventors

Seoul, South Korea

Jae Soo Kim