Aurrion, Inc.

Jae Shin

Gregory Alan Fish

Jonathan Edgar Roth

Brian Robert Koch

Erik Johan Norberg

Alexander W Fang

Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light. Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

Low loss heterogeneous optical waveguide transitions

Embodiments of the invention describe photonic integrated circuits (PICs) formed using simultaneous fabrication operations performed on photonic device layers. Each device of a PIC may be made from different optimized materials by growing the materials separately, cutting pieces of the different materials and bonding these pieces to a shared wafer. Embodiments of the invention bond photonic device layers so that shared (i.e., common) processing operations may be utilized to make more than one device simultaneously. Embodiments of the invention allow for simpler, more cost effective fabrication of PICs and improve photonic device performance and reliability.

Simultaneous processing of multiple photonic device layers

Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance. Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).

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Goleta, CA, United States of America

Jae Shin