Semes Co., Ltd.

Jae Seong Lee

Ji Hoon Jeong

Pil Kyun Heo

Ki Hoon Choi

Anton Koriakin

Hyun Yoon

Young Dae Chung

Chan Young Heo

Do Yeon Kim

Tae Shin Kim

Kuk Saeng Kim

Jee Young Lee

Kwang Sup Kim

Do Heon Kim

Jung Suk Goh

Young Je Um

Won Geun Kim

Ye Rim Yeon

Do Youn Lim

Yong Jun Seo

Byeong Geun Kim

Yoon Ki Sa

Hae Won Choi

Ji Soo Jeon

A supercritical processing apparatus includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel including a second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Supercritical processing apparatus

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

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Hwaseong-si, South Korea

Jae Seong Lee