Samsung Electronics Co., Ltd.

Jae-seong Byun

Hoon-Kee Min

In-Sung Lee

Ho-Min Kang

Ki-Wan Ahn

Hyun-su Lim

Jung-Mok Park

Jin Yong Jang

In Sung Lee

Bae-Hyoun Jung

Dong-hyuk Kim

Sung-Su Hong

Hong-bin Jeon

A method of making a liquid crystal display having a display region and a non-display region, the method comprises forming a thin film transistor ('TFT') having a drain electrode on an insulating substrate, forming an inorganic layer and an organic insulating layer sequentially on the TFT, forming an organic insulating layer pattern, by patterning the organic insulating layer, comprising a first organic layer hole to expose the inorganic layer on the drain electrode and a second organic layer hole formed along a circumference of the display region where the organic insulating layer is partially removed, removing the inorganic layer exposed through the first organic layer hole and the organic insulating layer remaining in the second organic layer hole, and forming a sealant in the second organic hole. The present invention thus provides a method of making an LCD to prevent a color filter substrate separating from a TFT substrate using fewer masks.

Liquid crystal display and method of making the same

An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a source electrode formed on the transparent substrate and connected to a source line and a drain electrode formed on the channel layer to cover the channel layer. The insulating layer has a contact hole to partially expose the drain electrode and the transparent substrate. The pixel electrode is connected to the drain electrode through the contact hole. When the above array substrate is employed in a liquid crystal display panel, the array substrate reduces pixel defect.

Array substrate with reduced pixel defect, method of manufacturing the same and liquid crystal display panel having the same

A manufacturing method for an array substrate, comprising forming a gate metal on a base substrate, patterning the gate metal to form a gate part having a gate electrode, a gate line and a gate pad. Then, a gate insulating layer, an active layer and a data metal are sequentially formed on the base substrate to cover the gate part. The data metal is patterned to form a data part having a data electrode, a data pad and a pixel electrode. Then, the exposed portion of the active layer is removed, and the exposed portion of the gate insulation layer is removed. When the data electrode is divided into a source electrode and a drain electrode, a switching device is completed.

Array substrate and display panel

A substrate for a display device includes an insulating substrate, a data line, an insulating layer and a pixel electrode. The insulating substrate has a switching element. The data line is formed on the insulating substrate to be electrically connected to a first electrode of the switching element. The insulating layer is formed on the insulating substrate having the switching element and the data line. The insulating layer has a contact hole through which a second electrode of the switching element is partially exposed and a groove adjacent to the data line. The pixel electrode is formed on the insulating layer to be electrically connected to the second electrode through the contact hole. Therefore, an image display quality may be improved, and a manufacturing cost of the LCD device may be reduced.

Substrate for a display device, liquid crystal display device having the same and method of manufacturing the same

An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating the same are provided. A wide energy-band gap .mu.c-Si(:Cl) fabricated using a mixed gas including SiH.sub.2 Cl.sub.2 is used as the ohmic contact layer, so that yield and productivity can be improved. The active layer is formed of .mu.c-Si:H(:Cl) with low hydrogen content and high stability. Off-current during illumination is sharply decreased, to thereby remarkably reduce leakage current when illumination is performed by backlighting.

Growing community of inventors

Suwon-si, South Korea

Jae-seong Byun