Cheil Industries Inc.

Samsung Electronics Co., Ltd.

Rayence Co., Ltd.

Jae Seok Lee

Kil Sung Lee

Tu Won Chang

Young Sun Shin

Hye Jung Chang

So Young Yun

Ji Hyun Jeon

Ji Yoon Yoon

Eun Kyung Hong

Sun Young Seo

A Ra Cho

Kyung Nam Kim

Eun Hwa Jang

Hoon Sik Kim

Jong Won Lee

Young Ki Lee

Jong Chul Kim

Young Woon Kim

Bo Un Yoon

Jae Seung Choi

Chang Ki Hong

Hyun Soo Roh

Joon Sang Park

Sang Rok Hah

Hae Sung Lee

Si Hyun Park

Kang Min Hwang

Won Joong Do

Dal Young Yu

Talipov Elmurod

Elmurod Talipov

According to the present invention, a device for controlling an operation of at least one electric device including a user interface unit having a conversation display window in which a conversation with the at least one electric device is displayed, a conversation input window configured to receive a character for controlling the operation of the at least one electric device, an icon selection window in which an icon corresponding to the at least one electric device is displayed, and a chatting screen on which a send button for transmitting the character received by the conversation input window is arranged, and a control unit configured to collectively control the operation of the at least one electric device based on a batch control instruction received by the conversation input window.

Control apparatus for controlling an operation of at least one electronic device

A control method of a home appliance, the method including retrieving information about a communication device, authenticating the communication device, registering the authenticated communication device, receiving voice data from the registered communication device, outputting a voice signal corresponding to the received voice data to a user, receiving the voice signal from the user, and transmitting voice data corresponding to the received voice signal to the communication device. When the method is used, even if a user loses a communication device in a home, call is possible using a home appliance such as refrigerator.

Home appliance and control method thereof

Described embodiments provide an X-ray detector and a method for driving the same. The X-ray detector includes: a sensor panel in which a plurality of pixels are defined, the plurality of pixels each including a photodiode for converting light corresponding to incident X-ray into an electric signal, and a switching element connected to one terminal of the photodiode to control the output of the electric signal; a light emitting unit for providing light to the photodiode; and a voltage supply unit connected to the other terminal of the photodiode to selectively supply first and second voltages different from each other.

X-ray detector and method for driving the same

Methods of forming integrated circuit devices use metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., &#x2267;8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.

Methods of forming integrated circuit devices having polished tungsten metal layers therein

Metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics are provided. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., &#x2267;8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.

Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching

Disclosed herein are slurry compositions for use in CMP(chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.

Slurry composition for use in chemical mechanical polishing of metal wiring

There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.

Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing

The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.

Polishing composition

Disclosed is a polishing composition which comprises an Al O /SiO composite-based metal oxide powder, deionized water and an additive, said metal oxide powder comprising an Al O /SiO composite as an essential component. The polishing composition is superior in removal rate and free of causing microscratches after polishing and thus, suitable for use in the global planarization of device wafer surfaces.

Composition for chemical mechanical polishing

Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.

Process for preparing metal oxide slurries suitable for the chemical mechanical polishing of semiconductors

Growing community of inventors

Euiwang-Shi, South Korea

Jae Seok Lee