Samsung Electronics Co., Ltd.

Jae-Seob Roh

Jung-Hyun Nam

Seok-Ha Lee

Hee-geun Jeong

Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.

CMOS image sensor including an interlayer insulating layer and method of manufacturing the same

A horizontal charge coupled device (CCD) driving circuit, a solid-state image-sensing device having the same, and a method of driving the solid-state image-sensing device, transmits image signals using horizontal driving signals having a middle voltage during rising and falling of the horizontal signals. The middle voltage of the horizontal driving signals is generated when an equipotential switch is turned 'on' while the output nodes of buffer circuits are in a floating state.

Horizontal charge coupled device driving circuit with reduced power consumption, solid-state image-sensing device having the same, and driving method of the solid-state image-sensing device

An image sensor and method thereof. In an example, the image sensor, may include a pixel array including a plurality of unit pixels, each of the plurality of unit pixels having a charge transfer unit for transferring charges accumulated in an optoelectronic converter to a charge detector via a charge transfer driving signal. The example image sensor may further include a row driving unit generating a boosted voltage, the boosted voltage set to a boosted voltage level higher than a power voltage level, the boosted voltage selectively boosted in response to a boosting voltage variable control signal. The row driving unit may selectively apply the charge transfer driving signal to the pixel array. In another example, the method may include selectively adjusting a voltage level of a charge transfer driving voltage and transferring the charge transfer driving voltage to a charge transfer unit for controlling an operation of the charge transfer unit.

Image sensor using a boosted voltage and a method thereof

Provided are a complementary metal oxide semiconductor (CMOS) image sensor and a method of fabricating the same, where the CMOS image sensor includes a photodiode, a drive transistor, a reset transistor, and a selection transistor; the drive transistor includes a threshold voltage adjustment region doped with impurities of a type substantially identical to that of impurities doped into a source and a drain of the drive transistor; and the CMOS image sensor includes pixels with expanded output signal ranges.

CMOS image sensor and method of fabricating the same

Provided is an image pick-up semiconductor device capable of testing operating characteristics of an analog-digital converter while the image pick-up semiconductor device operates. The device includes an active pixel sensor array having a plurality of pixels converting optical signals input from an external source into electrical signals, a columnar analog-digital converter converting signals output from the active pixel sensor array into first digital data, and a test analog-digital converter receiving two external signals and converting a voltage difference between the two external signals into second digital data.

Image pick-up semiconductor device capable of testing operating characteristics of an analog-digital converter thereof

Low-power and low-noise CDS (correlated double sampling) comparators for use with a CIS (CMOS image sensor) device are provided. A CDS comparator is constructed using one of various low-power inverters that provide decreased instantaneous transition currents at a logic threshold voltage. The use of such low-power inverters in CDS comparators enables a significant reduction in power consumption and noise in the CIS device, or other devices that implement such CDS comparators and/or inverters.

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Anyang-si, South Korea

Jae-Seob Roh