Samsung Electronics Co., Ltd.

Jae-Po Lim

Tae-Jong Lee

Soo-Yeon Jeong

Dong-Gu Yi

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.

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Seoul, South Korea

Jae-Po Lim