Korea Institute of Science and Technology

Jae-Phil Shim

Hyung-jun Kim

Sanghyeon Kim

Won Jun Choi

Yeon-Su Kim

Seong Kwang Kim

Heejeong Lim

Disclosed is a semiconductor device, which includes: forming a first channel layer including a Group III-V compound or germanium (Ge) and having a first semiconductor characteristics on a first substrate; forming a second channel layer including a Group III-V compound or germanium (Ge) and having a second semiconductor characteristics different from the first semiconductor characteristics on the first channel layer; forming a bonding layer containing an oxide on a second channel layer; allowing the bonding layer to be bound to the second substrate so that a structure including the bonding layer, the second channel layer, the first channel layer and the first substrate may be stacked on the second substrate; removing the first substrate stacked on the second substrate; and removing the first channel layer from a partial region of the structure stacked on the second substrate.

Method for manufacturing a semiconductor device with horizontally aligned semiconductor channels

A method for manufacturing a semiconductor device includes: forming a sacrificial layer on a first substrate, the sacrificial layer being made of a material whose lattice constant is different from that of germanium (Ge) by a preset threshold or below; forming a germanium (Ge) layer on the sacrificial layer; forming an insulation layer on a second substrate; bonding the germanium (Ge) layer onto the insulation layer; and removing the sacrificial layer and the first substrate by etching the sacrificial layer in a state where the germanium (Ge) layer is bonded to the insulation layer. In this method, a germanium-on-insulator (GeOI) structure having various surface orientations may be formed by means of epitaxial lift-off (ELO), and a strain may be applied to the germanium (Ge) layer using a lattice constant of the sacrificial layer.

Semiconductor device including strained germanium and method for manufacturing the same

A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.

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Seoul, South Korea

Jae-Phil Shim