Samsung Electronics Co., Ltd.

Jae-Phil Kong

Jae-Yong Jeong

Hwa-seok Oh

Hee-Chang Cho

A memory system includes a storage device and a host device. The storage device includes a memory device and a device controller. The device controller is configured to store device information. The device information includes a level of a power supply voltage required for the memory device. The host device includes a host controller and a power management integrated circuit (PMIC). The host device is configured to send a query command to receive the device information from the device controller during a power setting period. The PMIC is configured to supply a first level of power supply voltage to the memory device during the power setting period and, after the power setting period, selectively supply one of the first level of power supply voltage and a second level of power supply voltage to the memory device. The first level of power supply voltage is lower than the second level of power supply voltage.

Memory system and host device that maintain compatibility with memory devices under previous standards and/or versions of standards

A storage device includes a nonvolatile memory and a connector configured to connect the storage device to a host. The connector includes a detection terminal that provides a detection voltage to the host, a sensing resistor electrically connected to the detection terminal and having a resistance value that determines the level of the detection voltage, and a power supply terminal that receives a power supply voltage from the host, wherein the power supply voltage is selected by the host in response to the detection voltage.

Storage system, host, storage device, and methods of operating same

A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.

Growing community of inventors

Seoul, South Korea

Jae-Phil Kong