Samsung Electronics Co., Ltd.

Jae-ok Yoo

Han-Ku Cho

Yool Kang

Doo-youl Lee

Suk-Joo Lee

Chang-jin Kang

Sung-Chan Park

A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.

Growing community of inventors

Suwon-si, South Korea

Jae-ok Yoo