Hynix Semiconductor Inc.

Jae-Ok Kim

Kwang-Chul Joo

Woo-Jin Kim

Jong-Hyuk Oh

The present invention provides a method for forming an improved dielectric layer for semiconductor devices such as gate structures and capacitors. The method utilizes a layer of (TaO)(TiO)N (x defined herein) as a substitute for SiO, together with one or more additional procedures to minimize or prevent channel leakage and other problems that can minimize the performance of the structure.

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Method for forming a dielectric layer in a semiconductor device

The present invention provides a method for fabricating a semiconductor device capable of suppressing stresses concentrated at bottom corners of a gate electrode as simultaneously as preventing an oxidation of a metal included in a gate electrode. The inventive method includes the steps of: forming a gate oxide layer on a substrate; forming a gate electrode including at least one metal layer on the gate oxide layer; forming an oxide layer on the substrate including the gate electrode at a temperature lower than oxidation temperature of the metal layer; and etching selectively the densified oxide layer so as to form an oxide spacer on the lateral sides of the gate electrode.

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Ichon-shi, South Korea

Jae-Ok Kim