Sungkyunkwan University

Global Frontier Center for Multiscale Energy Systems

Jae Myeong Lee

Hyun Suk Jung

Won Bin Kim

Jin Hyuk Choi

SangMyeong Lee

Jun Young Kim

Jaesang Lee

Jaesung Kim

Jaemin Choi

So Yeon Park

Dong Geon Lee

Min Hee Kim

Byeong Jo Kim

Sang Myeong Lee

Ji Hyun Baek

Jung Hyun Suk

Han Gil Sang

Miyeon Baek

Oh Young Gong

ChangHwun Sohn

Saein Suh

Oh Yeong Gong

Gil Sang Han

Ohyeong Gong

Hee Jung Kim

The present application relates to a method for manufacturing an inverse opal structure membrane filter, the method comprising the steps of: preparing a mixed solution by mixing a nanoparticle dispersion solution and a sacrificial particle dispersion solution; applying the mixed solution onto a substrate to dry it; and heat-treating the mixed solution, wherein the surface of the sacrificial particles is modified by positive charges or negative charges.

Preparing method of membrane filter including inverse opal structure

A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

Resistance random access memory device and method for manufacturing same

A resistance access memory device includes a first electrode, a resistance change layer, formed on the first electrode, comprising a thin film containing BiXand and BiX, and a second electrode formed on the resistance change layer, where Xis a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof, Xis a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, and x is a real number of 0 or more and less than 3.

Resistance access memory device and fabricating method of the same

The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIBrthin film (where 0&#x2264;x&#x2264;3) and/or a CsAgBiBrIthin film (where 0&#x2264;x&#x2264;6) having an elpasolite structure.

Resistance random access memory device and fabricating method of the same

The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Resistance random access memory device and preparing method thereof

Growing community of inventors

Jincheon-gun, South Korea

Jae Myeong Lee