Hyundai Electronics Industries Co. Ltd.

Electronics and Telecommunications Research Institute

Hynix Semiconductor Inc.

Jae Kyung Wee

Jin Keun Oh

Phil Jung Kim

Se Jun Kim

Soon Il Yeo

Woodward Yang

Joo Sun Choi

Chang Hyuk Lee

Young Ho Seol

Pil Soo Lee

Ho Youe Cho

Disclosed are a method and an apparatus of near field scan calibration, and more particularly, a method and an apparatus for near field scan calibration for calibrating a characteristic of an antenna for near field scan measurement of a semiconductor chip. The apparatus for near field scan calibration includes: a plane-type text fixture having a plane shape; an antenna positioned spaced apart from the plane-type test fixture by a set spacing distance and acquiring data including a magnetic field; and a spectrum analyzer analyzing the data acquired by the antenna.

Apparatus and method for near field scan calibration

A clock synchronization device is disclosed that includes a phase detecting unit for detecting a phase difference between an external clock signal and an internal clock signal, a binary code generating unit for outputting a binary code value according to output signals from the phase detecting unit, a code converting unit for converting the binary code value from the binary code generating unit into a thermometer code value, a D/A converting unit for outputting a voltage corresponding to the thermometer code value from the code converting unit and a clock synchronization control unit for outputting the internal clock signal from the external clock signal according to the output voltage from the D/A converting unit. As the result, the clock synchronization device is controlled by employing the D/A converting unit for converting the binary code to the thermometer code in order to decrease the number of the registers, the leakage current and the chip size.

Clock synchronization device

An antifuse repair circuit is disclosed for selectively programming a specific antifuse to replace a defective cell with a redundant cell. The antifuse repair circuit includes: (a) a special test mode decoder for selecting an antifuse box according to an address signal; (b) a bank selector for selecting an antifuse bank according to the output signal from the special test mode decoder and the address signal; (c) a special address multiplexer for selecting a specific antifuse within an antifuse bank selected by the bank selector according to the output signal from the bank selector and the address signal; (d) a negative voltage generator for generating a negative voltage to program an antifuse device; (e) a power-up detector for detecting the supply voltage to generate a plurality of control signals in order to detect whether the antifuse device is programmed; (f) a unit antifuse circuit for programming the antifuse device according to the signals from the special test mode detector, the special address multiplexer, the negative voltage generator and the power-up detector; and (g) a repair circuit responsive to the output signal from the unit antifuse circuit and an external control signal to replace a defective cell with a redundant cell.

Antifuse repair circuit

The anti-fuse circuit includes three sub-blocks: a multiplexer having inputs of control signals and addresses and yielding the activation of a programming signal and program addresses; a programming voltage generator consisting of an oscillator and a charge pump; and an anti-fuse unit circuits for the program/read of anti-fuse states. For an anti-fuse program at the special test mode, a program address generation circuit having inputs of control signals and addresses activates the programming voltage generator and makes a special or program address for selection of anti-fuse. In the normal mode, the program address generation circuit and an internal power generator remain at an inactive state. In anti-fuse unit circuit, the program address and the programming voltage signal from the programming voltage generator serve to switch the terminal of the anti-fuse up to a programming voltage level when the anti-fuse is selected for programming of anti-fuse elements.

Antifuse circuitry for post-package DRAM repair

Growing community of inventors

Seoul, South Korea

Jae Kyung Wee