Samsung Electronics Co., Ltd.

Jae-Kyun Park

Soon-Moon Jung

Sung-Bong Kim

Hyun-Seung Song

Kyung-Eun Kim

Semiconductor devices include a first gate pattern provided on the first active region, a second gate pattern over the first active region, a third gate pattern over the second active region, and a fourth gate pattern over the second active region. The second gate pattern is parallel to the first gate pattern in a first direction. The third gate pattern has an asymmetric shape to the first gate pattern with respect to the first direction, and the fourth gate pattern is parallel to the third gate pattern in the first direction, and has an asymmetric shape to the second gate pattern with respect to the first direction. MOS transistors having good properties may be provided in a narrow horizontal area. The MOS transistors may be used in highly stacked semiconductor devices.

Semiconductor devices

SRAM cells and devices are provided. The SRAM cells may share connections with neighboring cells, including ground, power supply voltage and/or bit line connections. SRAM cells and devices are also provided that include first and second active regions disposed at a semiconductor substrate. Parallel first and second gate electrodes cross over the first and second active regions. One end of the first active region adjacent to the first gate electrode is electrically connected to the second active region adjacent to the first gate electrode through a first node line parallel to the first gate electrode, and the other end of the first active region adjacent to the second gate electrode is electrically connected to the second active region adjacent to the second gate electrode through a second node line parallel to the second gate electrode. The first node line is electrically connected to the second gate electrode through a first local interconnection crossing over the first node line, and the second node line is electrically connected to the first gate electrode through a second local interconnection crossing over the second node line. Additionally, a word line may be in direct contact with gate electrodes of transfer transistors of the SRAM cells.

Growing community of inventors

Hwaseong-si, South Korea

Jae-Kyun Park