Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Hynix Semiconductor Inc.

Jae-Kyun Lee

Jae-Young Oh

Jung-eun Lee

Seung-Chan Choi

Moo-Hyoung Song

Yong-Sup Hwang

Hae-Jung Lee

Dae-Jung Choi

Sun-Woo Kim

Gee-Sung Chae

Kyung-Mo Son

Hyun-Sik Park

Ji-Hye Lee

Eun-Hye Lee

Jung Il Lee

Seung-Ryull Park

Min-Kyung Lee

Jae-Seon Yu

Jeong-Gi Yun

Soon-Hwan Hong

Sang-Rok Oh

Sung-Chol Yi

Myoung-Su Yang

Sun-Ju Ku

Sang-Su Jang

Jun-Young Jeong

Jun-Beom Cho

Taek-Jun Jung

Goe-Sung Chae

Tae-Hwan Yoon

A color filter substrate includes a substrate in which a plurality of pixel areas are defined; a black matrix formed on the substrate, and having a plurality of openings in correspondence to the pixel areas; a color filter layer formed on the substrate, and including a red color filter, a green color filter, and a blue color filter that are sequentially arranged in a first direction in correspondence to the pixel areas; and a plurality of first column spacers and a plurality of second column spacers formed over the black matrix, and having different heights, wherein a height of each of the first column spacers is higher than a height of each of the second column spacers, and an arrangement density of the first column spacers is lower than an arrangement density of the second column spacers.

Color filter substrate and liquid crystal display device including the same

An array substrate includes a substrate; gate lines over the substrate along a first direction; data lines over the substrate along a second direction and crossing the gate lines to define pixel regions; a thin film transistor at each crossing portion of the gate and data lines; an insulating layer covering the thin film transistor and having a flat top surface; a common electrode on the insulating layer all over the substrate; a common line on the common electrode; a passivation layer on the common line; and a pixel electrode on the passivation layer in each pixel region and connected to the thin film transistor, the pixel electrode including electrode patterns, wherein the passivation layer has a step height at a top surface of the passivation layer due to the plurality of common lines.

Array substrate and liquid crystal display device including the same

A liquid crystal display device includes an array substrate including: gate and data lines crossing each other on a first substrate to define a pixel region; a common line in parallel with the gate line; first and second common line patterns extending from the common line, wherein the data line is between the first and second common line patterns; a thin film transistor connected to the gate and data lines; a pixel electrode connected to the thin film transistor and in the pixel region; and an inorganic black matrix below the gate line, the common line, and the first and second common lines, wherein the inorganic black matrix below the first and second common lines shields the data line; an opposing substrate including a common electrode on a second substrate; and a liquid crystal layer between the array substrate and the opposing substrate.

Liquid crystal display device and method of manufacturing the same

An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure.

Array substrate for reflective type or transflective type liquid crystal display device

An array substrate for a liquid crystal display device includes: a substrate; a gate line and a data line on the substrate; a common line parallel to and spaced apart from the gate line; a thin film transistor connected to the gate line and the data line; a plurality of pixel electrodes in the pixel region; a plurality of common electrodes alternating with the plurality of pixel electrodes; at least one outermost common electrode at an edge portion of the pixel region; a black matrix corresponding to the thin film transistor, the gate line and the data line, the black matrix including an inorganic material and having an open portion; and a color filter layer in the open portion.

Array substrate for in-plane switching mode liquid crystal display device

Array substrate for reflective type or transflective type liquid crystal display device and method of fabricating the same

An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line disposed along a first direction on the substrate, a data line disposed along a second direction and crossing the gate line to define a pixel region, a thin film transistor connected to the gate line and the data line, pixel electrodes disposed in the pixel region and connected to the thin film transistor, common electrodes disposed in the pixel region and alternating with the pixel electrodes, a semiconductor layer underlying the data line and including a portion having a width greater than a width of the data line, and a first blocking pattern comprising an opaque material and disposed under the semiconductor layer.

Array substrate for liquid crystal display device and method of manufacturing the same

A method for fabricating a semiconductor device includes forming a fuse over a substrate, the fuse having a barrier layer, a metal layer, and an anti-reflective layer stacked, selectively removing the anti-reflective layer, forming an insulation layer over a whole surface of the resultant structure including the fuse, and performing repair-etching such that part of the insulation layer remains above the fuse.

Method for fabricating semiconductor device

A method for fabricating a semiconductor device with a recess gate includes providing a substrate, forming an isolation layer over the substrate to define an active region, forming mask patterns with a first width opening exposing a region where recess patterns are to be formed, and a second width opening smaller than the first width and exposing the isolation layer, forming a passivation layer along a height difference of the mask patterns, etching the substrate using the passivation layer and the mask patterns as an etch barrier to form recess patterns, removing the passivation layer and the mask patterns, and forming gate patterns protruding from the substrate to fill the recess patterns.

Method for fabricating semiconductor device with recess gate

A method of fabricating a liquid crystal display device includes: preparing a first substrate in which a plurality of first panels is formed; preparing a second substrate in which a plurality of second panels is formed; forming a seal pattern around an outer edge of the panel, the seal pattern defining an active region and a dummy region and having at one side a protruding portion extending to the dummy region; dropping liquid crystal more than the reference amount to the active region; bonding the first and second substrates together by the seal pattern; separating a plurality of liquid crystal panels by cutting the first and second substrates, the liquid crystal panels being formed by bonding the first and second panels; and removing surplus liquid crystal from the liquid crystal panel by pressurizing the liquid crystal panel. Accordingly, image quality deterioration due to an insufficient or excessive amount of provided liquid crystal is prevented by forming the protruding portion at the seal pattern and removing the surplus liquid crystal from the liquid crystal panel or providing liquid crystal through the protruding portion.

Method of fabricating liquid crystal display device

A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer along a surface of the trench, forming an insulation layer having an etch selectivity ratio different from that of the liner oxide layer over the liner oxide layer, forming a spin on dielectric (SOD) oxide layer to fill a portion of the trench over the insulation layer, and forming a high density plasma (HDP) oxide layer for filling the remaining a portion of the trench.

Method for fabricating isolation layer in semiconductor device

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Gyeonggi-do, South Korea

Jae-Kyun Lee