Samsung Electronics Co., Ltd.

Jae-Kyun Kim

Jun-youn Kim

Young-jo Tak

Young-soo Park

Jae-Won Lee

Young-Soo Park

Joo-sung Kim

Hyo-ji Choi

Su-hee Chae

Eun-ha Lee

Chul-Hwan Lee

Hyun-gi Hong

Byeong-Woo Kim

Hyun-Gi Hong

Joo-Sung Kim

Young-Jo Tak

Jun-Youn Kim

Su-Hee Chae

Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7&#x2266;k&#x2266;13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Semipolar nitride semiconductor structure and method of manufacturing the same

Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that the directions of crystal faces in the crack reducing portion are randomly oriented.

Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrate

A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.

Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure

According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.

Semiconductor light emitting device including hole injection layer

A gallium nitride based semiconductor device includes a silicon-based layer doped simultaneously with boron (B) and germanium (Ge) at a relatively high concentration, a buffer layer on the silicon-based layer, and a nitride stack on the buffer layer. A doping concentration of boron (B) and germanium (Ge) may be higher than 1&#xd7;10/cm.

Gallium nitride based semiconductor device and method of manufacturing the same

Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.

Low-defect semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1), and has a lattice constant LP2 that is greater than LP1 and smaller than LP0. The third layer is formed on the second layer, includes AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1), and has a lattice constant LP3 that is smaller than LP2.

Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure

A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer. The first layer may include AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) and have a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer may include AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1) and have a lattice constant LP2 that is greater than the lattice constant LP1 and smaller than the lattice constant LP0. The third layer may include AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1) and have a lattice constant LP3 that is greater than the lattice constant LP1 and smaller than the lattice constant LP2.

Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure

A mobile communication system selection is disclosed. A method for selecting a mobile communication system of a portable terminal includes driving a first timer; checking whether a Mobile Country Code (MCC) of a region where the portable terminal is located is obtained by searching for a network until the first timer expires; when the MCC is obtained before the first timer expires, storing the obtained MCC to a previous MCC list; performing a first checking operation for checking whether the obtained MCC belongs to a list of countries supporting only a first mobile communication system; and obtaining a service of the first mobile communication system by searching for only the first mobile communication system when the obtained MCC belongs to the list of the countries supporting only the first mobile communication system.

Growing community of inventors

Hwaseong-si, South Korea

Jae-Kyun Kim