Samsung Electronics Co., Ltd.

Jae-Ku Lee

Young-Hoon Park

Jung-Hyun Cho

Bum-Suk Kim

June-Taeg Lee

Sung-Won Doh

Sun-Wook Heo

Yu-Jin Ahn

An image sensor is formed by providing a semiconductor substrate having first, second and third pixel regions and first and second color filters disposed on their respective pixel regions. A photoresist layer is coated over the first and second color filters and the third color pixel region. The photoresist is removed from the first and second color filters, leaving a third color filter of substantially the same height as the first and second color filters. Micro lenses may then be formed on the color filters.

Image sensor and method of making same

A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.

CMOS image device having high light collection efficiency and method of fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Jae-Ku Lee