Samsung Electronics Co., Ltd.

Jae-kang Koh

Byoung-Deog Choi

Jun-Won Lee

Geum-bi Mun

A first bit line structure is disposed between a first contact structure and a second contact structure. A first air spacer is interposed between the first contact structure and the first bit line structure. A first separation space is connected to an air entrance of the first air spacer and interposed between the first contact structure and the first bit line structure. A cover insulating pattern with a gap portion is interposed between the first contact structure and the second contact structure. The gap portion has a downwardly-decreasing width. An air capping pattern covers the cover insulating pattern to seal the first separation space.

Growing community of inventors

Seongnam-si, South Korea

Jae-kang Koh