Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Mobile Display Co., Ltd.

Jae-Jung Kim

Sang-Jin Hyun

Dong-Soo Lee

Sang-Yong Kim

Won-Keun Chung

Jin-Kyu Jang

Sangjin Hyun

Hoonjoo Na

Dongsoo Lee

Sangyong Kim

Wonkeun Chung

Jinkyu Jang

Joon-Young Park

Won-Kyu Kwak

Jae-Yong Lee

Sang-Bom Kang

June-Hee Lee

Yong-Ho Ha

Hye-Lan Lee

Rakhwan Kim

Jeong-Yeol Lee

Jae-Yeol Song

Dong-Young Sung

Byoung Hoon Lee

Kyoung-Wook Min

Moon-Kyu Park

Sang Yong Kim

Tae-Jin Park

Chan Hyeong Lee

Chanhyeong Lee

A semiconductor device may include a channel pattern stacked on a substrate and a gate electrode on the substrate. The channel pattern includes semiconductor patterns. The gate electrode extends to cross the channel pattern. The gate electrode may include dielectric layers, first work function adjusting patterns, and second work function adjusting patterns. The dielectric layers may enclose the semiconductor patterns, respectively. The first work function adjusting patterns may enclose the dielectric layers, respectively, and the second work function adjusting patterns may enclose the first work function adjusting patterns, respectively. The first work function adjusting patterns may be formed of an aluminum-containing material, and each corresponding one of the first work function adjusting patterns may be in contact with a corresponding one of the second work function adjusting patterns enclosing the corresponding one of the first work function adjusting patterns.

Semiconductor device and method of fabricating the same

A semiconductor device includes an active pattern disposed on a substrate. A gate insulating film is disposed on the active pattern and extends along the active pattern. A work function adjustment pattern is disposed on the gate insulating film and extends along the gate insulating film. A gate electrode is disposed on the work function adjustment pattern. The work function adjustment pattern includes a first work function adjustment film, a second work function adjustment film that includes aluminum and wraps the first work function adjustment film, and a barrier film including titanium silicon nitride (TiSiN). A silicon concentration of the barrier film is in a range of about 30 at % or less.

Semiconductor device

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Semiconductor devices

A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structures

A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

There is provided a master glass having a structure capable of preventing damage caused by static electricity. The master glass is a substrate on which a deposition process is experimentally performed by being experimentally loaded loading the master glass into a deposition apparatus before starting the deposition process of the substrate for electronic devices. In one embodiment, a master glass includes first conductive patterns and a second conductive pattern. The first conductive patterns are formed to correspond to a deposition pattern required in a substrate for electronic devices. The second conductive pattern electrically connects all the first conductive patterns to one another.

Master glass having structure capable of preventing damage caused by static electricity

An organic electroluminescent display device (OELD) that prevents particles from creating blind spots by forming a recess or a groove in the surface of an insulating layer that covers edges of a pixel electrode. The OELD includes a lower electrode arranged on a substrate, an insulating layer arranged on the substrate, the insulating layer having an aperture adapted to expose a portion of the lower electrode, an organic layer arranged on the exposed portion of the lower electrode, and an upper electrode arranged on the substrate, wherein the insulating layer includes a recess and/or a groove in its surface.

Organic electroluminescent display device with improved interface between anode and luminescent organic layer

An organic light emitting diode (OLED) is used to realize a full-color display device. More particularly, a polymer OLED is used to increase uniformity in thickness of a layer formed of polymer ink, and to prevent mixing of colors. The OLED includes a substrate having a first electrode layer formed thereon in a predetermined pattern, an insulator layer formed on the substrate forming a channel in a predetermined pattern, an organic polymer layer formed based on the channel and having at least an emission layer, a barrier formed at either side of the insulator layer of at least one end of the channel for preventing ink for the organic polymer layer from running out of both ends of the channel, and a second electrode layer formed on the polymer organic layer.

Polymer organic light emitting diode

Growing community of inventors

Suwon-si, South Korea

Jae-Jung Kim