Lg Display Co., Ltd.

Jae Jun Ahn

Byung Chul Ahn

Byoung Ho Lim

Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area.

Liquid crystal display device and fabricating method thereof

A liquid crystal display device having first and second substrates; a gate line on the first substrate; a data line crossing the gate line to define a pixel area, the gate line and the data line having a gate insulating film there between; a thin film transistor including a gate electrode, a source electrode, a drain electrode and a semiconductor layer for defining a channel between the source electrode and the drain electrode; a common line in parallel to the gate line on the first substrate; a common electrode extended from the common line in the pixel area; and a pixel electrode spaced apart from the common line and the common electrode in the pixel area to be defined in a pixel hole passing through the gate insulating film, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode, and wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode to be connected to the pixel electrode.

A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel electrode formed of a transparent conductive film in a pixel hole passing through the gate insulating film in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode; and wherein the drain electrode protrudes from the semiconductor layer toward inside of the pixel electrode to be connected to the pixel electrode.

A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.

Thin film transistor substrate and fabricating method thereof, liquid crystal display panel using the same and fabricating method thereof

A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line defining a pixel area with a gate insulating film therebetween; a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer with a channel between the source electrode and the drain electrode; a common line in parallel to the gate line on the first substrate; a common electrode extending from the common line into the pixel area; and a pixel electrode on the gate insulating film in the pixel area, wherein the drain electrode overlaps with the pixel electrode to connect to the pixel electrode; and wherein the semiconductor layer is removed from an area where it overlaps a transparent conductive film.

A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. A liquid crystal display device comprising first and second substrates; a gate line on the first substrate; a gate insulating film on the first substrate; a data line crossing the gate line to define a pixel area; a pixel hole in the pixel area; a pixel electrode formed of a transparent conductive layer on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive layer.

Growing community of inventors

Gumi-si, South Korea

Jae Jun Ahn