Fairchild Semiconductor Corporation

Jae J Yun

Jifa Hao

John L Benjamin

Randall L Case

A power semiconductor device having high avalanche capability comprises an Ndoped substrate and, in sequence, Ndoped, Pdoped, and Pdoped semiconductor layers, the Pand Pdoped layers having a combined thickness of about 5 &#x3bc;m to about 12 &#x3bc;m. Recombination centers comprising noble metal impurities are disposed substantially in the Nand Pdoped layers. A process for forming a power semiconductor device with high avalanche capability comprises: forming an Ndoped epitaxial layer on an Ndoped substrate, forming a Pdoped layer in the Ndoped epitaxial layer, forming a Pdoped layer in the Pdoped layer, and forming in the Pand Ndoped layers recombination centers comprising noble metal impurities. The Pand Pdoped layers have a combined thickness of about 5 &#x3bc;m to about 12 &#x3bc;m.

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Mountain Top, PA, United States of America

Jae J Yun