Samsung Electronics Co., Ltd.

Jae-inh Song

Young-bum Koh

Heung-soo Park

Kyu-hwan Chang

Young-ki Hong

Moon-hee Lee

Heon-jae Ha

Hong-seong Son

Young-jun Cho

Chun-yong Park

Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.

Methods for cleaning wafers used in integrated circuit devices

A pre-treatment method for improving the growth of hemi-spherical grains (HSGs) on a semiconductor structure by removing etching residue before forming a capacitor storage node having the HSGs. The pre-treatment method includes dry-etching a material layer formed on a surface of a semiconductor substrate to form a storage node pattern on the semiconductor substrate. Multiple ashing sequences are then performed on the semiconductor structure using an etching gas, followed by a stripping step using H,SO,to remove any residue remaining on the semiconductor structure after the multiple ashing sequences. The semiconductor structure is then cleaned with an ammonium peroxide mixture (APM), and HSGs are thereafter grown on capacitor storage nodes of the storage node pattern.

Pre-treatment method performed on a semiconductor structure before forming hemi-spherical grains of capacitor storage node

In-situ cleaning apparatuses for wafers used in integrated circuit

Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.

Solutions for cleaning integrated circuit substrates

A solution and method for cleaning a silicon wafer following a chemical-mechanical polishing process is disclosed. The cleaning solution being 0.1% to 99% by total solution volume of phosphoric acid, 0.1% to 25% by total solution volume of fluoroboric acid, and the balance of the solution, deionized water.

Cleaning solution for use on a semiconductor wafer following

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Kyungki-do, South Korea

Jae-inh Song