Skhynix Inc.

Kolon Industries, Inc.

Jae Il Kim

Dae Suk Kim

Ki Hun Kwon

Jin Youp Cha

Seung Geun Baek

Min Su Park

Hong Jung Kim

Jong Chern Lee

Yu Ri Lim

Chang Hyun Kim

Geun Ho Choi

Dong Kyun Kim

Hak Gee Jung

Jin Hee Cho

Yong Mi Kim

Seung Wook Oh

Sang Ah Hyun

Sang Hyun Ku

Don Hyun Choi

A semiconductor device may be provided. The semiconductor device may include a power-down signal generation circuit and a refresh signal generation circuit. The power-down signal generation circuit may be configured to generate a power-down signal which is enabled during a power-down operation period based on a multi-operation signal that is generated by decoding commands. The refresh signal generation circuit may be configured to generate a refresh signal which is enabled during a refresh operation period based on the multi-operation signal and an operation selection signal.

Semiconductor device with power-down signal generation

A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to enable a start signal and an oscillation signal based on the reset signal. The oscillation signal starts to oscillate in response to the reset signal.

Semiconductor memory device with power down operation

Semiconductor memory system and semiconductor memory device, which can be remotely initialized

A semiconductor device includes a period signal generation circuit and an interruption signal generation circuit. The period signal generation circuit generates a period signal in response to a refresh pulse and an end pulse. The interruption signal generation circuit generates an interruption signal for controlling an operation that an address is set as a target address, if the address having the same logic level combination as the target address is inputted while the period signal is enabled.

Semiconductor device

A semiconductor device includes a first rank and a second rank. The first rank operates in synchronization with a clock signal in response to a first rank selection signal, and the second rank operates in synchronization with the clock signal in response to a second rank selection signal. The first rank performs a termination operation without performing an internal control operation if the first rank selection signal maintains an enabled state in synchronization with a first edge and a second edge of the clock signal.

Semiconductor device having ranks that performs a termination operation

A semiconductor device includes a first command pulse generation circuit configured to generate a first command pulse from an internal command address based on a first blocking signal; and a second command pulse generation circuit configured to generate a second command pulse from the internal command address based on a second blocking signal.

Method for generating command pulses and semiconductor device configured to perform the method

A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to generate internal commands, internal addresses and internal data for performing an initialization operation. The second semiconductor device may be configured to store the internal data in a plurality of memory cells selected by the internal commands and the internal addresses.

Semiconductor devices and semiconductor systems

Semiconductor devices and operations thereof

This invention relates to a polyamide-imide precursor, a polyamide-imide obtained by imidizing the same, a polyamide-imide film, and an image display device including the film. The polyamide-imide precursor includes, in a molecular structure thereof, a first block, obtained by copolymerizing monomers including dianhydride and diamine, and a second block, obtained by copolymerizing monomers including an aromatic dicarbonyl compound and aromatic diamine. The dianhydride includes biphenyltetracarboxylic acid dianhydride (BPDA) and 2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA), and the diamine includes bistrifluoromethylbenzidine (TFDB).

Polyamide-imide precursor, polyamide-imide film and display device comprising same

Semiconductor device having ranks that perform a termination operation

A semiconductor device includes a delay selection signal generation circuit, an internal read signal generation circuit, and an internal write signal generation circuit. The delay selection signal generation circuit generates a delay selection signal in response to an information code signal. The internal read signal generation circuit generates an internal read signal from a mask write signal in response to the delay selection signal and a clock. The internal write signal generation circuit delays the mask write signal by a predetermined delay period to generate an internal write signal.

A semiconductor device may be provided. The semiconductor device may operate in a 2N mode as well as a normal mode.

A semiconductor system may be provided. The semiconductor system may include a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device outputs address signals. The first semiconductor device may receive or output data. The second semiconductor device may perform an impedance calibration operation and outputs pull-up codes and pull-down codes generated by the impedance calibration operation. The third semiconductor device may output internal data selected by the address signals as the data or store the data during a write operation or a read operation.

Growing community of inventors

Yongin-si, South Korea

Jae Il Kim