Skyworks Global Pte. Ltd.

Other

Cheil Industries Inc.

Jae Hyung Lee

Kwang Jae Shin

Jiansong Liu

Yiliu Wang

Myung Hyun Park

Jong Duk Han

Yosuke Hamaoka

Alexandre Augusto Shirakawa

Benfeng Zhang

Guofeng Chen

Myeong Gweon Gu

Jae Myoung Jhung

Rakesh Kumar

You Qian

Michael Jon Wurtz

Benjamin Paul Abbott

Chun Sing Lam

Kang Yeol Park

Yu Hui

Hee Jung Park

A ladder filter comprises series arm bulk acoustic wave resonators electrically connected in series between an input port and an output port and shunt bulk acoustic wave resonators electrically connected between adjacent ones of the series arm bulk acoustic wave resonators and ground, each of the arm bulk acoustic resonators including a central active region and a raised frame region outside of the central active region, each of the series arm bulk acoustic resonators including a piezoelectric film, at least one of the series arm bulk acoustic wave resonators including a layer of oxide disposed directly on the piezoelectric film in the raised frame region, and a metal layer disposed directly on the piezoelectric film in the central active region and on the layer of oxide in the raised frame region, the metal layer having a thickness in the raised frame region no greater than in the central active region.

Bulk acoustic wave resonator with oxide raised frame

A piezoelectric microelectromechanical system microphone comprises a support substrate, a diaphragm including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the diaphragm, and a compliant anchor formed of a material with a greater compliance than a compliance of the piezoelectric material, the compliant anchor defined in the diaphragm in an anchor region between the piezoelectric material of the diaphragm and the support substrate to improve sensitivity and reduce residual stress impact of the piezoelectric microelectromechanical system microphone.

Piezoelectric microelectromechanical system microphone with compliant anchors

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

Method of making acoustic devices with directional reinforcement

Methods of manufacturing bulk acoustic wave resonators are disclosed. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.

Methods of manufacturing bulk acoustic wave resonators with patterned mass loading layers

A bulk acoustic resonator can include a piezoelectric layer implemented between first and second electrodes with respective lateral shapes. The first and second lateral shapes can be selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Bulk acoustic resonator

Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.

Bulk acoustic wave resonators with patterned mass loading layers

Methods related to gradient raised frames in film bulk acoustic resonators. According to certain aspects, a method for fabricating a film bulk acoustic resonator device can include: forming a first metal layer over a substrate; forming a piezoelectric layer; forming a second metal layer, the piezoelectric layer positioned between the first and second metal layers; and forming a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

Methods related to gradient raised frames in film bulk acoustic resonators

A method of making an acoustic sensor (e.g., for use in a piezoelectric MEMS microphone) includes forming or providing a mold having one or more grooves in a top surface of the mold that extend in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam, the distal portion of the beam having a corrugated section including one or more grooves that correspond to the grooves of the mold. The method also includes forming a gap in the structure to define two beams separated by the gap, and releasing the structure from the mold to form one or more cantilever beams that increases an acoustic resistance of the gap between sensors.

Method of making acoustic devices with edge corrugation

Aspects of this disclosure relate bulk acoustic wave resonators with a patterned mass loading layer at least contributing to a difference in mass loading between a main acoustically active region of the bulk acoustic wave resonator and a recessed frame region of the bulk acoustic wave resonator. Related methods of manufacturing can involve forming the patterned mass loading layer in the main acoustically active region and the recessed frame region in a common processing step such that the patterned mass loading layer has a higher density in the main acoustically active region than in the recessed frame region.

Bulk acoustic wave resonator with patterned mass loading layer and recessed frame

Gradient raised frames in film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator device can include a substrate, first and second metal layers implemented over the substrate, a piezoelectric layer between the first and second metal layers, and a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

Gradient raised frames n film bulk acoustic resonators

Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Devices and methods related to film bulk acoustic resonators

An acoustic sensor (e.g., for use in a piezoelectric MEMS microphone) includes a substrate and a cantilever beam attached to the substrate. The cantilever beam has a proximal portion attached to the substrate and a distal portion that extends from the proximal portion to a free end of the beam, the beam extending generally linearly from the proximal portion toward the free end in a first direction. The beam has a wall portion at or proximate the free end that extends in a second direction generally transverse to the first direction and increases an acoustic resistance of the gap between sensors. An electrode is disposed on or in the proximal portion of the beam.

Acoustic devices with edge corrugation

Aspects of this disclosure relate to bulk acoustic wave resonators. A bulk acoustic wave resonator includes a patterned mass loading layer that affects a resonant frequency of the bulk acoustic wave resonator. The patterned mass loading layer can have a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the bulk acoustic wave resonator. Related filters, acoustic wave dies, radio frequency modules, wireless communications devices, and methods are disclosed.

Bulk acoustic wave resonator with mass loading layer

Film bulk acoustic resonator having suppressed lateral mode. In some embodiments, a film bulk acoustic resonator can include a piezoelectric layer having a first side and a second side, a first electrode having a first lateral shape implemented on the first side of the piezoelectric layer, and a second electrode having a second lateral shape implemented on the second side of the piezoelectric layer. The first and second lateral shapes can be selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes. The resonator shape can include N curved sections joined by N vertices of an N-sided polygon. The resonator shape can be configured to have no axis of symmetry.

Growing community of inventors

Seoul, South Korea

Jae Hyung Lee