Dongbu Hitek Co., Ltd.

I-sens, Inc.

Other

Lg Innotek Co., Ltd.

Sts Semiconductor & Telecommunications Co., Ltd.

Jae Hyun Yoo

Jong Min Kim

Hakhyun Nam

Geun Sig Cha

Gang Cui

Moon Hwan Kim

Keun Ki Kim

Ishwar K Sethi

Hee Cheol Kim

Young Seok Lee

Ju Yong Kim

Byung Wook Woo

Hyun Joon Oh

Disclosed is an electrochemical biosensor having a sample introduction channel in which an insulator is employed to introduce a small amount of a sample uniformly and accurately and to adjust an area of a working electrode, thereby guaranteeing the accurate quantitative analysis of a sample. Provided with a sample collection barrier at a sample entrance, the biosensor allows a sample to be introduced at higher accuracy and to be analyzed with higher reproducibility and reliability.

Electrochemical biosensor with sample introduction channel capable of uniform introduction of small amount of sample

Provided are a wafer level package and a manufacturing method thereof. The wafer level package method includes preparing a patterned wafer, forming a recess in a position, in which a semiconductor chip is to be attached, of the patterned wafer through an etching process, fixing the semiconductor chip to the interior of the recess, and applying a passivation material to portions other than the semiconductor chip within the recess and to an upper end of the wafer. The wafer level package includes a silicon or glass wafer including a recess formed through etching and having an area larger than a semiconductor chip, a semiconductor chip fixed to the interior of the recess, and a passivation material filling an empty space other than the semiconductor chip within the recess and applied to a portion corresponding to an area larger than the semiconductor chip on an upper end of the wafer.

Fan-out wafer level package and manufacturing method thereof

A bipolar junction transistor (BJT) is provided. The BJT can include a semiconductor substrate, a first well disposed in the substrate and implanted with a first impurity, a second well disposed at one side of the first well and implanted with a second impurity, a first device isolation layer disposed in the first well and defining an emitter area, and a second device isolation layer disposed in the second well and defining a collector area, The BJT can also include an emitter having a second impurity, a base having a first impurity, a collector having a second impurity, and a high concentration doping area having a second impurity at high concentration. The high concentration doping area can be provided at one side of the collector in the second well.

Bipolar junction transistor and method of manufacturing the same

A bipolar junction transistor includes a first trench element isolation film, a second trench element isolation film, a first base region, a second base region, a collector region, a first well, a second well, an emitter, a collector, and bases. The second well is formed by implanting an n-type impurity into the semiconductor substrate, and the emitter is formed by implanting the n-type impurity into the emitter region between the first trench element isolation film and the second well. The collector is formed by implanting the n-type impurity into the collector region between the first well and the second trench element isolation film, and the bases are formed by implanting the p-type impurity into the first base region and into the second base region between the emitter region and the second well.

An electrostatic discharge protection device is provided. The electrostatic discharge protection device can include a semiconductor substrate having a first well and a second well, a silicon controller rectifier (SCR) device, and first and second impurity areas disposed on the first and second wells to form a PN junction. The SCR can have a PNPN structure or an NPNP structure, and the PN junction structure and the SCR device can be alternately disposed when the substrate is viewed from above.

High voltage electrostatic discharge protection device

Disclosed are an LDMOS device and a method for manufacturing the same capable of decreasing the concentration of a drift region between a source finger tip and a drain, thereby increasing a breakdown voltage. An LDMOS device includes a gate which is formed on a substrate, a source and a drain which are separately arranged on both sides of the substrate with the gate interposed therebetween, a field oxide film which is formed to have a step between the gate and the drain, a drift region which is formed of first condition type impurity ions between the gate and the drain on the substrate, and at least one internal field ring which is formed inside the drift region and formed by selectively ion-implanting second conduction type impurity ions in accordance with the step of the field oxide film.

Lateral double diffused metal oxide semiconductor device and method for manufacturing the same

A Power Management Integrated Circuit (PMIC) that includes a substrate, a high-side (HS) region on the substrate, a low-side (LS) region spaced from the first region, a device isolation layer interposed between the HS region and the LS region, a metal interconnection connected to the HS region across the device isolation layer and configured to permit a high-voltage current to flow in the HS region, and at least one electric field shield between the metal interconnection and the device isolation layer. Since the electric field shield is disposed under the metal interconnection, a sufficient breakdown voltage can be ensured for the HS region and the LS region.

Power management integrated circuit

Disclosed is an electrochemical biosensor measuring device which can be used together with an electrochemical biosensor. The biosensor measuring device comprises an electrical connection portion which is electrically connected with the electrodes of the biosensor upon the insertion of the biosensor there into, and a connector having a structure in which at least one light absorption or reflection path sequentially comprising a light emitter-production lot information identification portion-detector unit is provided to identify the production lot information recorded in the biosensor. The electrochemical biosensor measuring device can automatically identify the production lot information of the biosensor, encoded in the form of a hue or hole marks, upon the insertion of the electrochemical biosensor into the measuring device, thereby obviating the need to manually input the production lot information of the biosensor. Thus, inconvenience and the frequency of errors, which occur when a user personally inputs the production lot information, can be reduced, with the result that the measured values can be conveniently and accurately acquired.

Electrochemical biosensor measuring system

A semiconductor device comprises a gate electrode on a semiconductor substrate, drift regions at opposite sides of the gate electrode, source and drain regions in the respective drift regions, and shallow trench isolation (STI) regions in the respective drift regions between the gate electrode and the source or drain region, wherein the drift regions comprise first and second conductivity-type impurities.

Semiconductor device and method of fabricating the semiconductor device

An electrochemical biosensor and a biosensor measuring device. The electrochemical biosensor includes a plurality of electrodes, capillary sample cell portions, reaction reagent layers, electrode connection portions, and a production lot information identification portion. The production lot information identification portion is configured such that the production lot information is recorded thereon has one or more infrared absorption/reflection marks, which indicate information about differences between production lots through the printing and/or attachment of colored or colorless materials, having differences in absorbency or reflectivity of infrared rays, in conformity of a predetermined pattern or through the attachment of transparent films. The electrochemical biosensor measuring device includes a plurality of integrated photo-reflector sensing devices that emit and receive infrared rays to identify the production lot information recorded on the production lot information identification portion of the biosensor.

Electrochemical biosensor and biosensor measuring device

Disclosed is a porous membrane built-in biosensor comprising (a) at least one substrate; (b) an electrode layer patterned on the substrate, consisting of an electrode system and a circuit connector; (c) an insulator, formed on parts of the electrode layer, for electrically separating the electrode system from a circuit connector; and (d) a porous membrane via the insulator on the electrode system, wherein, when a whole blood sample is introduced to the biosensor, the whole blood sample is separated into its components during the chromatographic motion through the porous membrane so that only blood plasma can be contacted with the electrode system. The porous membrane built-in biosensor is provided with a sample inlet, which allows samples to be introduced in a constant quantity to the biosensors porous membranes without pretreatment.

Biosensors with porous chromatographic membranes

A computer-implemented apparatus and method for generating a rule-based expert system from a trained neural network which is expressed as network data stored in a computer-readable medium. The rule-based expert system represents an interconnected network of neurons with associated weights data and threshold data. A network configuration extractor is provided for accessing the network data and for ascertaining the interconnection structure of the trained neural network by examining the network data. A transformation system is utilized to alter the algebraic sign of at least a portion of the weights data to eliminate differences in the algebraic sign among the weights data while selectively adjusting the threshold data to preserve the logical relationships defined by the neural network. A symbolic representation generator applies a sum-of-products search upon each neuron in the network to generate a multivalued logic representation for each neuron. A propagation mechanism combines the multivalued logic representation of each neuron through network propagation to yield a final logical expression corresponding to a rule-based expert system of the trained neural network. The resulting apparatus permits the knowledge incorporated in the connection strengths of neurons to be expressed as rule-based expert system.

System for converting neural network to rule-based expert system using multiple-valued logic representation of neurons in feedforward network

A computer-implemented apparatus and method for designing decision tree classifiers for use in artificial applications. A tree structure of fixed size with empty internal nodes, i.e. nodes without any splitting function, and labeled terminal nodes is first constructed. Using a collection of training vectors of known classification, a neural learning scheme combining backpropagation and soft competitive learning is then used to simultaneously determine the splits for each decision tree node. Compact trees are generated that have multifeature splits at each internal node which are determined on global rather than local basis. The computer-implemented apparatus and method consequently produces decision trees yielding better classification and interpretation of the underlying relationships in the data.

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Seoul, South Korea

Jae Hyun Yoo