Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Hyundai Transys Incorporated

Hanmi Pharm. Co., Ltd.

Hanmi Science Co., Ltd.

Jae Hyun Park

Min Gyu Kim

Sang Wook Kwon

Nam Yun Kim

Ki Young Kim

Yun Kwon Park

Young Ho Ryu

Dong Zo Kim

Yong Il Kim

Ho Sub Lim

Dong Ho Kim

Min Jung Kim

Daewon Ha

Keum Su Song

Chi Hyung Ahn

Dae Won Ha

Jung Hyun Cho

Dong Woo Jeong

Bong Chul Kim

Yo Han Kim

Sungil Park

Jong Soo Woo

Byung Yong Choi

Byoung Hee Lee

Sung Il Park

Do Y Choi

Kyeong Soo Kim

Han Su Yoo

Jun Young Choi

Ho Taek Im

Hyeong Jong Kim

Hwa Jun Lee

Ho Taek Yim

Young Keun Choi

Taek Kwan Kwon

Jin Cheul Kim

Yoshinao Harada

Ji Hyun Im

Young Su Yoon

Caleb Hyung Min Park

Shanmugam Srinivasan

Young Jun Na

Yoon Sub Shin

Eun Jin Yoon

Ki Young Jang

Mijin Park

Young-Hun Kim

Hyung Seo Kim

Teak Kwan Kwon

Benjamin Joon Lee

Jae Ho Kim

Caleb Hyungmin Park

Young-Su Yoon

Caleb Hyung Park

Yong Ii Kim

A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending in a second direction surrounding the first and second active patterns, and a high dielectric film between the first and second active patterns and the gate electrode. The gate electrode includes first and second work function adjusting films surrounding the high dielectric film on the first and second active patterns, and a filling conductive film surrounding the first and second work function adjusting films. The first and second work function adjusting films include first and second work function conductive films, each of which includes a first metal film. A thickness of the first metal film of the first work function conductive film is greater than that of the second work function conductive film.

Semiconductor device and method for manufacturing the same

Disclosed are a three-dimensional semiconductor device and a method of fabricating the same. The semiconductor device includes: a first active region on a substrate, the first active region including a pair of lower source/drain regions and a lower channel structure; a second active region on the first active region, the second active region including a pair of upper source/drain regions and an upper channel structure; and a gate electrode on the lower and upper channel structures. The gate electrode includes: first and second metal structures, which are respectively provided adjacent bottom and top surfaces of semiconductor layers of the lower and upper channel structures.

Three-dimensional semiconductor device and method of fabricating the same

A semiconductor device having high performance and a high degree of integration includes a substrate, a first transistor disposed on the substrate, the first transistor comprising a first active pattern including a first two-dimensional semiconductor material, a first gate electrode through which the first active pattern penetrates, and a first source/drain contact connected to the first active pattern on a side surface of the first gate electrode, a second transistor disposed on an upper surface of the first transistor, the second transistor comprising a second active pattern including a second two-dimensional semiconductor material, a second gate electrode through which the second active pattern penetrates, and a second source/drain contact connected to the second active pattern on a side surface of the second gate electrode, and a first wiring structure interposed between the first transistor and the second transistor, and electrically connecting the first transistor and the second transistor.

Semiconductor device and method for fabricating the same

A semiconductor memory device and a method for manufacturing the same. The semiconductor memory device may include a substrate, a first lower wire pattern and a first upper wire pattern stacked on the substrate, and spaced apart from each other; a second lower wire pattern and a second upper wire pattern stacked on the substrate, spaced apart from each other, and spaced apart from the first lower and upper wire patterns; a first gate line surrounding the first lower wire pattern and the first upper wire pattern; a second gate line surrounding the second lower wire pattern and the second upper wire pattern and spaced apart from the first gate line; a first lower source/drain area; a first upper source/drain area; and a first overlapping contact that electrically connects the first lower source/drain area, the first upper source/drain area and the second gate line to each other.

Semiconductor memory devices and methods for manufacturing the same

A seat ventilation device for vehicles which is configured to perform both an air cleaning function and a seat ventilation function, and is operated to perform one selected function. The seat ventilation device includes a base duct mounted in a seat and having an indoor outlet configured to discharge air to an interior of a vehicle, a blower assembled with the base duct, configured to intake air in the interior of the vehicle and selectively connected to the indoor outlet, a cover duct mounted on the base duct and having a seat outlet selectively connected to the blower so as to discharge air to the seat, an air cleaning module mounted on the blower so as to filter the air taken in through the blower, and an opening and closing door located in the cover duct and configured to open selectively either the seat outlet or the indoor outlet.

Seat ventilation device for vehicles

Growing community of inventors

Hwaseong-si, South Korea

Jae Hyun Park