Samsung Display Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Ajou University Industry-academic Cooperation Foundation

Kwangwoon University Industry-academic Collaboration Foundation

Daewoo Electronics Corporation

Db Hitek Co., Ltd.

Sogang University Research Foundation

Jae Hyun Lee

Ji Hong Jo

Hyun Hee Gu

Hye Young Choi

Jong Ho Lee

Myung Jun Park

Jang Yeol Lee

Yoo Jeong Lee

Seok Je Seong

Hyung Jun Kim

Young Seok Lee

Zin Woo Park

Jee Su Hong

Seong Jun Lee

Jin Sung An

Young Jae Song

Kap Soo Yoon

Seul Ki Kim

Yong Man Seo

Byoung Mok Kim

Kwang Soo Lee

Yoonjee Shin

Hyeonsik Kim

Kyunghyun Baek

Yoon-Jong Cho

Jong Han Lee

Woo Ho Jeong

Seung Ha Choi

Seul-Ki Kim

Seung Rae Kim

Ki Su Jin

Yoon Jong Cho

Sung Ho Cho

Young Min Lee

Chi Wook An

Moo Soon Ko

Ji Seon Lee

Kyung Hoon Lee

Se Wan Son

Sang Hyun Jun

Jeong-Soo Lee

Byeong Ho Jeong

Geun Young Park

Woo Geun Lee

Jong Hae Kim

June Whan Choi

Jun Hyuk Moon

Sang Joon Seo

Chae Min Park

Wan Hee Hong

Eun Ae Jung

Kyung Hyun Baek

Choong Sik Yoo

Yoon-jong Cho

Seung Sok Son

Myeong Sik Cheon

Woo Chui Shin

Hwi Beom Shin

Myeong Bum Pyun

Jong Seok Kim

Yun Ho Cho

Soon Chul Kwon

Su Jung Jung

So La Lee

Lee Hwan Hwang

Seung Hyun Lee

Seul Ha Myung

Hong Bae Park

Yoo Chul Shin

Jung Kyoung Cho

Seong-Ho Song

Jong Bum Choi

Jong Ha Park

Sun Woong Kim

Kwang Pyo Hong

Hyun Woong Baek

Jae Sup Park

Sung Jae Ha

Dong Seop Park

Jong Hoon Baek

Da Bok Jeong

Gil Ju Jung

Woong Shin

Hyun Woo Seung

Hyo Sung Kim

Min Seok Jo

Min Joon Park

The display device comprises a substrate, a first electrode on the substrate, a pixel defining layer on the first electrode, the pixel defining layer exposing the first electrode, a light emitting layer on the first electrode exposed by the pixel defining layer, a second electrode on the light emitting layer, and an encapsulation layer on the second electrode, the encapsulation layer including a two-dimensional material. A slope of a 2D-peak position to a G-peak position of the two-dimensional material measured by Raman spectroscopy is within a range of 1.7 to 2.7.

Display device including a two-dimensional material in an encapsulation layer and method of manufacturing the same

A display device and a method of fabricating the same, the display device including a light-blocking layer disposed on a substrate, a buffer layer disposed on the light-blocking layer, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed on the semiconductor layer, a connection pattern layer and a gate electrode disposed on the gate insulating layer and spaced apart from each other, an interlayer dielectric layer disposed on the connection pattern layer and the gate electrode, a via layer disposed on the interlayer dielectric layer, a first bridge layer and a second bridge layer disposed on the via layer, a pixel electrode disposed on the second bridge layer, and a light-emitting layer disposed on the pixel electrode. An end of the first bridge layer is connected to the light-blocking layer through the connection pattern layer, and another end thereof is connected to the semiconductor layer. The second bridge layer connects the semiconductor layer with the pixel electrode.

Display device and method of fabricating the same

A display device includes a substrate including a display area and a non-display area, a light-emitting element disposed in the display area, and a common voltage supply line disposed in the non-display area and electrically connected to the light-emitting element. The common voltage supply line includes at least two main supply lines, a sub-supply line for connecting the at least two main supply lines, and at least one anti-static pattern disposed outside the sub-supply line in a plan view.

Display device

Disclosed is a superjunction semiconductor device () and a method for manufacturing the same and, more particularly, to a superjunction semiconductor device () and a method for manufacturing the same seeking to improve breakdown voltage characteristics of the device by effectively dispersing a lateral electric field in a ring region R in the lower portion of an epitaxial layer by forming first conductivity type floating impurity-doped regions in the lower portion of the epitaxial layer in the ring region R under a p-rich condition.

Superjunction semiconductor device and method for manufacturing same

A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

Semiconductor device with active pattern including a transition pattern and method for fabricating the same

A display panel includes two or more gate layers including a plurality of gate patterns extending in a first direction and one or more source-drain layers including a plurality of source-drain patterns extending in a second direction crossing the first direction. The gate patterns of the two or more gate layers are curved or bent along a hole surrounding area corresponding to a periphery of a hole in an active area. The source-drain patterns of the one or more source-drain layers are curved or bent along the hole surrounding area. The gate patterns of at least one of the two or more gate layers overlap the source-drain patterns of at least one of the one or more source-drain layers in a thickness direction of the display panel in the hole surrounding area.

Display panel and display apparatus including the same

A display device includes a substrate including pixels including a first pixel and a second pixel, a driver of the first pixel disposed on the substrate, a driver of the second pixel disposed on the substrate, a first pixel electrode overlapping the driver of the first pixel and electrically connected to the driver of the first pixel, a second pixel electrode overlapping the driver of the first pixel and the driver of the second pixel and electrically connected to the driver of the second pixel, an emission layer disposed on the first pixel electrode and the second pixel electrode, and a common electrode disposed on the emission layer, wherein the second pixel electrode includes a first opening overlapping the driver of the first pixel.

Display device with pixel electrode having opening overlapping pixel driver

A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

A capacitor component includes a body including dielectric layers, first and second internal electrodes, laminated in a first direction, facing each other, and first and second cover portions, disposed on outermost portions of the first and second internal electrodes, and first and second external electrodes, respectively disposed on both external surfaces of the body in a second direction, perpendicular to the first direction, and respectively connected to the first and second internal electrodes. An indentation including a glass is disposed at at least one of boundaries between the first internal electrodes and the first external electrode or one of boundaries between the second internal electrodes and the second external electrode.

Capacitor component

Disclosed in the present invention is a floating hologram system. The floating hologram system includes a diffuser configured to form a projection image using light beams transmitted from an image transmitter and diffuse the formed image, and a holographic optical element on which the image diffused from the diffuser is incident and which generates a virtual image floating at a position a predetermined distance therefrom and has a convex lens characteristic. A distance between the diffuser and the holographic optical element is determined based on a focal length of the holographic optical element and a distance from the holographic optical element to the virtual image.

Floating hologram system using holographic optical element

A display device includes a first semiconductor layer disposed on a substrate; a first insulating layer disposed on the first semiconductor layer; a scan line disposed on the first insulating layer; a second insulating layer on the scan line; an inverted scan line on the second insulating layer; a third insulating layer disposed on the inverted scan line; a second semiconductor layer disposed on the third insulating layer; a fourth insulating layer disposed on the second semiconductor layer; an initializing voltage line disposed on the fourth insulating layer and overlapping the scan line; a first transistor including a channel disposed in the first semiconductor layer and receiving a gate signal through the scan line; and a second transistor including a channel disposed in the second semiconductor layer and receiving a gate signal through the inverted scan line.

A display device includes: a pixel unit including pixels connected to first scan lines, second scan lines, and data lines; a scan driver for supplying a first scan signal to the pixels through the first scan lines at a first frequency and supplying a second scan signal to the pixels through the second scan lines at a second frequency different from the first frequency in a first mode; a first signal supply for supplying an inspection signal to the pixels through at least one of the data lines in response to the first scan signal in a first period of the first mode; and a second signal for supply supplying a bias signal to the pixels through the data lines in response to the first scan signal in a second period of the first mode.

Display device and an inspection method thereof

A capacitor component includes a body including a dielectric layer, a first electrode and a second internal electrode, laminated in a first direction, opposing each other, and a first cover portion and a second cover portion, disposed on outermost surfaces of the first and second internal electrodes, each having a thickness of 25 &#x3bc;m or less, a first electrode layer and a second electrode layer, respectively disposed on both external surfaces of the body in a second direction perpendicular to the first direction and respectively, and plating layers, respectively disposed on the first and second electrode layers. A metal oxide is disposed on a boundary between the first electrode layer and the plating layer and a boundary between the second electrode layer and the plating layer.

A multilayer electronic component includes a body including dielectric layers and first and second internal electrodes alternately laminated with respective dielectric layers interposed therebetween, and first and second surfaces opposing each other in a direction by which the internal electrodes are laminated, third and fourth surfaces connected to the first and second surfaces and opposing each other, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other; a moisture-proof layer disposed on at least one surface of anyone of the first, second, fifth, or sixth surface and containing a rare-earth oxide; a first external electrode disposed on the third surface and connected to the first internal electrodes; and a second external electrode disposed on the fourth surface and connected to the second internal electrodes.

Multilayer electronic component having moisture-proof layer on body thereof

Growing community of inventors

Seoul, South Korea

Jae Hyun Lee