Merck Patent Gmbh

Dongbu Hitek Co., Ltd.

Jae-Hyun Kang

Yong-Hyun Choi

Hyun-Jin Yoon

Yong-Kuk Yun

Dong-Mee Song

The invention relates to a polymerisable LC material comprising one or more di- or multireactive mesogenic compounds and one or more compounds of formula UVI, wherein the individual radicals have one of the meaning as given in the claims. Furthermore, the present invention relates also to a method for its preparation, a polymer film with improved thermal durability and UV stability obtainable from a corresponding polymerisable LC material, to a method of preparation of such polymer film, and to the use of such polymer film and said polymerisable LC material for optical, electro-optical, decorative or security devices.

Polymerisable liquid crystal material and polymerised liquid crystal film

A polymerisable LC material containing  Furthermore, a method for preparing the polymerisable LC material, and a polymer film with improved thermal durability and UV stability obtainable from the polymerisable LC material, and a method of preparing such polymer film, and using such polymer film and the polymerisable LC material for optical, electro-optical, decorative or security devices.

A polymerisable LC material comprising at least one di- or multireactive mesogenic compound and at least one compound of formula CO-, wherein R, R, L, L, L, and n have the meanings as given in claim. Furthermore, a method for preparation of the LC material, a polymer film with improved thermal durability obtainable from the corresponding polymerisable LC material, a method of preparation of such polymer film, and the use of such polymer film and said polymerisable LC material for optical, electro-optical, decorative or security devices.

The present invention relates to a liquid-crystal medium which comprises one or more compounds each of formulae I and II in which the occurring groups and parameters have the meanings given in claim

Liquid-crystalline medium

In embodiments, when forming a metal line of the semiconductor device, a developer having an amine group may coated on the metal line layer such that the amine group remains on a surface of the metal line layer. Further, a method of fabricating a semiconductor device may include forming a metal line layer for interlayer connection of the semiconductor device, performing a first photo process by coating a first photoresist on the metal line layer, after performing the first photo process, removing the first photoresist for a rework, after removing the first photoresist, coating a developer having an amine group on the metal line layer, after coating the developer, coating a second photoresist on the metal line layer, and performing a photo process by employing the second photoresist.

Method of fabricating semiconductor device

An optical proximity correction (OPC) processing method may include at least one of the following steps: Detecting coordinate values of individual piece patterns constituting a graphic design system (GDS). Merging to the form of a specific pattern, composed of outermost coordinate values, on the basis of the detected coordinate values. Shrinking the merged GDS pattern and forming a GDS pattern having a desired magnifying power. Performing an optical proximity correction (OPC) process on the GDS pattern having the desired magnifying power.

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Seoul, South Korea

Jae-Hyun Kang