Samsung Electronics Co., Ltd.

Ulvac, Inc.

Jae-Hyuck An

Chang-Zip Yang

Tae-Chul Kim

Sung-Wook Park

Seung-Ki Chae

Il-Kyoung Kim

Seiichi Takahashi

Ki-Young Yun

Jae-Wook Kim

Woo-Seok Kim

Hyun Joo Han

No-Hyun Huh

Kwang-Myung Lee

Myeong-Jin Kim

Kengo Tsutsumi

Shinji Yanagisawa

Kyoung-Ho Jang

A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Etching apparatus and etching method

A method of manufacturing a semiconductor device includes first and second processes, the latter requiring more processing time. An apparatus for performing the semiconductor manufacturing process includes a first reactor, and a plurality of second reactors for each first reactor. A first group of wafers are subjected to the first process within the first reactor, and are then transferred into a second reactor as isolated from the outside air. The first group of wafers is subjected to the second process within the second reactor. At the same time, a second group of wafers are subjected to the first process within the first reactor. After the first process is completed, the second group of wafers is transferred into an unoccupied one of the second reactors as isolated from the outside air. There, the second group of wafers is subjected to the second process. Accordingly, process failures otherwise due to the exposure of the wafers are minimized, and productivity is high despite the difference in the processing times.

Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices

The present invention relates to a semiconductor manufacturing furnace having a heat blocker mounted to an elevating plate of the furnace. The heat blocker prevents the internal temperature of the furnace from decreasing radically when a wafer boat is lowered from the processing chamber of the furnace by the elevating plate. The heat blocker includes a sealed case, a plurality of horizontally extending heat-reflecting plates disposed in the case, and a plurality of support pins for supporting and fixing the reflecting plates in place. The heat-reflecting plates reflect heat back up into the processing chamber, as the elevating plate lowers the wafer boat, to keep the internal temperature of the heater stable. This not only enhances the productivity of the manufacturing process but also enhances the uniformity of the processed wafers.

Furnace of apparatus for manufacturing a semiconductor device having a heat blocker for preventing heat loss during the unloading of wafers

A chemical vapor deposition apparatus includes a processing chamber formed by an external tube, and an internal tube installed inside the external tube, a wafer boat securable within the processing chamber, and a single gas diffusing nozzle extending vertically within the processing chamber. The gas diffusing nozzle includes an outer tubular member having a closed top end, a diaphragm dividing the interior of the tubular member into two regions disposed side by side, and columns of gas diffusing openings extending through the tubular member on opposite sides of the diaphragm, respectively. The gas infused through the gas diffusing nozzle is forced by the diaphragm to rise up one side region of the tubular member and then descend through the other side region. In this way, the gas is evenly distributed to the wafers situated in the boat. Accordingly, the reaction time necessary for the gas to form identical layers on the wafers is minimized, the quality and reliability of the wafers is improved, and the production rate is increased.

Chemical vapor deposition apparatus having a gas diffusing nozzle

Growing community of inventors

Suwon, South Korea

Jae-Hyuck An