Skhynix Inc.

Toshiba Memory Corporation

Jae-Hyoung Lee

Jong-Koo Lim

Ku-Youl Jung

Yang-Kon Kim

Tae-Young Lee

Toshihiko Nagase

Guk-Cheon Kim

Jeong-Myeong Kim

Daisuke Watanabe

Eiji Kitagawa

Kazuya Sawada

Youngmin Eeh

Tadaaki Oikawa

Kenichi Yoshino

Taiga Isoda

Young Min Eeh

Sung-Woong Chung

A method for fabricating an electronic device including a semiconductor memory may include forming a buffer layer over a substrate, the buffer layer operable to aide in crystal growth of an under layer; forming the under layer over the buffer layer, the under layer operable to aide in crystal growth of a free layer; and forming a Magnetic Tunnel Junction (MTJ) structure including the free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer over the under layer.

Method for fabricating electronic device

An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Method of making magnetic tunnel junction memory device with stress inducing layers

According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

Magnetic device and manufacturing method of magnetic device

An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]or [x/Ru], x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.

Electronic device

Magnetic tunnel junction memory device with stress inducing layers

An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the free layer may include: a first sublayer having a damping constant of 0.1 or less; a second sublayer having a perpendicular magnetic anisotropy energy density ranging from 1.0&#xd7;10to 1.0&#xd7;10erg/cm; and an insertion layer interposed between the first sublayer and the second sublayer.

An electronic device may include a semiconductor memory, and the semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; an under layer disposed under the MTJ structure; and a perpendicular magnetic anisotropy increasing layer disposed below the under layer and including a material having a different crystal structure from the under layer.

Electronic device including an under layer and a perpendicular magnetic anisotropy increasing layer having a different crystal structure from the under layer

An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.

Growing community of inventors

Icheon-si, South Korea

Jae-Hyoung Lee