Hynix Semiconductor Inc.

Jae Hyoung Koo

Kwon Hong

Jae Hong Kim

Eun Shil Park

Dong Ho Lee

Eun-Shil Park

Jae Mun Kim

Hee Soo Kim

The present invention discloses to a method of forming a gate electrode, the method according to the present invention comprises the steps of forming a lower amorphous silicon layer using silane (SiH) gas and nitrous oxide (NO) gas; forming an upper amorphous silicon layer on the lower amorphous silicon layer; and crystallizing the lower and upper amorphous silicon layers through a thermal process.

Method of forming gate electrode

In one embodiment, a gate insulating layer, a conductive layer, and a metal layer are formed over a semiconductor substrate. An ion implantation region is formed in an interface of the conductive layer and the metal layer by performing an ion implantation process. A flash annealing process is performed on the ion-implanted semiconductor substrate. The metal layer, the conductive layer, and the gate insulating layer are patterned.

Method of fabricating semiconductor device

A method of fabricating a flash memory device is disclosed. The method comprises forming a first insulating layer on a semiconductor substrate; accumulating nitrogen at an interface between the semiconductor substrate and the first insulating layer to form a second insulating layer at the interface; and implanting oxygen into the second insulating layer to convert the second insulating layer to a third insulating layer.

The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a semiconductor substrate over which a tunnel insulating layer and a first conductive layer are formed is provided. A first oxide layer is formed on the first conductive layer using a plasma oxidization process in a state where a back bias voltage is applied. A nitride layer is formed on the first oxide layer. A second oxide layer is formed on the nitride layer. A second conductive layer is formed on the second oxide layer.

Method of fabricating flash memory device

A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second dielectric layers are formed by one process at the same time using silicate as the first dielectric layer and the high dielectric layer formed on the silicate as the second dielectric layer. Accordingly, cost can be saved since the process is shortened, a film quality better than that of the existing dielectric layer structure can be obtained, and a film with improved step coverage can be formed. Furthermore, capacitance and insulating breakdown voltage can be increased by using silicate having a high dielectric constant and a high dielectric layer.

Growing community of inventors

Seoul, South Korea

Jae Hyoung Koo