Samsung Electronics Co., Ltd.

Jae-hyoung Choi

Cha-young Yoo

Jung-hee Chung

Se-hoon Oh

Young-sun Kim

Youn-soo Kim

Jeong-sik Choi

Sung-Tae Kim

Min-Young Park

Jae-Soon Lim

Sang-Yeol Kang

Se-hyoung Ahn

Jong-Cheol Lee

Sun-Min Moon

Jin-sun Lee

Jae-wan Chang

Wan-don Kim

Ki-Yeon Park

Young-Geun Park

Vladimir Urazaev

Jin-Ha Jeong

Jae-Hyun Yeo

Gab-Jin Nam

Kyu-Ho Cho

Suk-Jin Chung

Se-Hoon Oh

Jung-Hee Chung

Suk-jin Chung

Young-Min Kim

Chang-ki Hong

Jung-Ho Lee

Young-Jin Kim

Ki-chul Kim

Jae-young Ahn

Han-jin Lim

Youn-Joung Cho

Ha-Jin Lim

Yong-Suk Tak

Woo-Gwan Shim

Nam-Kyu Kim

Suk-Hun Choi

Seok-Woo Nam

Cha-Young Yoo

Eun-ae Chung

Bong-hyun Kim

Yoon-Ho Son

Woo-Sung Lee

Jong-Bom Seo

Kyoung-Ryul Yoon

Yun-Seok Kim

Jae-young Park

Jeong-hee Chung

Seung-Min Ryu

Sung-Ho Kang

Seog-Min Lee

Nam-Myun Cho

Jin-tae Noh

Youn-Soo Kim

Beom-jong Kim

Hong-Bum Park

Jong-bom Seo

Hong-bum Park

Dong-kyun Park

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.

Method for manufacturing semiconductor device

To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.

Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same

Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Semiconductor devices and methods of fabricating the same

Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand.

Method of fabricating semiconductor device

Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.

Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions

A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.

Method of fabricating semiconductor device having dielectric layer with improved electrical characteristics

A method of forming a metal thin film can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product.

ALD method of forming thin film comprising a metal

In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor

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Hwaseong-si, South Korea

Jae-hyoung Choi