Samsung Electro-mechanics Co., Ltd.

Jae Hyouck Choi

Kyu Jin Choi

Jeong Hoon Kim

Youn Suk Kim

Suk Chan Kang

Ki Joong Kim

Joong Jin Nam

Jun Goo Won

Kwang Du Lee

Young Jean Song

Sang Wook Park

Ho Kwon Yoon

Sang Hee Kim

Shinichi Iizuka

Sung Hwan Park

Kyung Pyo Hong

Kyung Hee Hong

Yoo Sam Na

Young Sik Hur

Seong Jong Cheon

Jong Ok Ha

Jang Ho Park

Seung Seoup Lee

Chan Yong Jeong

Sang Hoon Ha

Dae Seok Jang

Jun Kyung Na

Se Jong Kim

Chul Hwan Yoon

Sung Jae Yoon

Kang Ta Jo

Seong Geun Kim

Je Hee Cho

Hyo Gun Bae

Chul Hyo Yoon

Il Kwon Chung

Hyo Kun Bae

Ho Taek Song

Shinichi Ilzuka

A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.

Front-end module

A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.

Power amplifying apparatus having bias boosting structure with improved linearity

A power amplifying apparatus includes a first bias circuit that generates a first bias current having a first magnitude, a first amplification circuit connected between a first node and a second node, and that receives the first bias current, amplifies a signal input through the first node, and outputs a first amplified signal to the second node, a second bias circuit that generates a second bias current having a second magnitude that is different from the first magnitude of the first bias current, and a second amplification circuit connected in parallel with the first amplification circuit between the first node and the second node, and that receives the second bias current, amplifies the signal input through the first node, and outputs a second amplified signal to the second node, wherein the second amplification circuit may have a size that is different from a size of the first amplification circuit.

Power amplifying apparatus with asymmetrical amplification structure and linearity

A tunable inductor circuit includes a first common transmission line having one end connected to a first terminal; a first uncommon transmission line having one end connected to another end of the first common transmission line; a first switch circuit configured to selectively connect one of the other end of the first common transmission line and another end of the first uncommon transmission line to a first common node; a second common transmission line having one end connected to the first common node; a second uncommon transmission line having one end connected to another end of the second common transmission line; and a second switch circuit configured to selectively connect one of the other end of the second common transmission line and another end of the second uncommon transmission line to a second terminal.

Tunable inductor circuit

A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.

Power amplifier and method of controlling output of power amplifier

A power amplifier apparatus includes: an amplifier configured to amplify an input signal; a sensing circuit connected to the amplifier and configured to sense a bias of the amplifier; and a biasing circuit connected to the sensing circuit and configured to provide a biasing current to the amplifier, wherein the sensing circuit is configured to change the biasing current based on the bias of the amplifier.

Power amplifier and method for limiting current in power amplifier

The present invention relates to a switch circuit and a single pole double throw (SPDT) circuit. The switch circuit includes: a MOS transistor transferring or blocking a signal according to a turn on/off operation thereof; a gate resistor connected to a gate of the MOS transistor; and a variable gate resistor circuit increasing a resistance value of the gate resistor when the MOS transistor is changed from a turn-off state to a turn-on state.

Switch circuit and SPDT switch circuit

An radio frequency switch according to an example includes a first switching circuit including first switching elements connected in series between an antenna port and a transmission port and operated by a first gate signal, a second switching circuit including second switching elements connected in series between the antenna port and a reception port and operated by a second gate signal, a first shunt circuit connected between the transmission port and a ground and operated by the second gate signal, a second shunt circuit connected between the reception port and the ground and operated by the first gate signal, and a third shunt circuit connected between the reception port and the other end of an inductor grounded at one end and operated by the second gate signal.

Radio frequency switch

A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.

Power amplifier

A switching circuit may include a switching circuit unit; a reference voltage unit connected between the switching circuit unit and a signal input terminal and providing a preset reference voltage; and a voltage generating unit dividing a first control voltage provided to the switching circuit unit by a preset magnitude to generate a second control voltage corresponding to the reference voltage, and providing the second control voltage to bodies of the plurality of respective switching devices.

Switching circuit and RF switch including the same

A RF (Radio Frequency) switch may include: a common port; a first switching unit including a plurality of first switching devices; a second switching; a negative voltage generating unit sensing the high frequency signal from the common port and rectifying the sensed high frequency signal to generate a negative voltage; and a logic circuit unit controlling switching operations of the first and second switching units using the negative voltage provided from the negative voltage generating unit and a positive voltage provided from the outside.

RF switch

A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.

There are provided a power combiner implemented by a printed circuit board, a power amplifying module having the same, and a signal transceiving module. The power combiner includes: a primary wiring unit formed on one surface of a printed circuit board, receiving a plurality of balance signals having positive balance signals and negative balance signals, and including a plurality of positive primary wirings and a plurality of negative primary wirings, wherein the plurality of positive primary wirings are spaced apart from each other by a predetermined interval, the plurality of negative primary wirings are spaced apart from each other by a predetermined interval, one ends of the plurality of positive primary wirings are connected in common to thereby receive the plurality of positive balance signals, one ends of the plurality of negative primary wirings are connected in common to thereby receive the plurality of negative balance signals, and the other ends of the plurality of positive primary wirings and the other ends of the plurality of negative primary wirings are connected to each other to thereby form a loop; and a secondary wiring unit formed on the other surface of the printed circuit board, and including a secondary wiring combining powers of the plurality of balance signals from the primary wirings forming the loop to thereby output a single end signal.

Power combiner, power amplifying module having the same, and signal transceiving module

Disclosed herein are a tunable capacitance control circuit and a tunable capacitance control method. The tunable capacitance control method is a tunable capacitance control method by a tunable capacitance control circuit including an MIM capacitor, a plurality of FET switches, and a control unit, wherein the control unit outputs control signals allowing only one of the plurality of (n) FET switches to be switched on and the remaining (n&#x2212;1) FET switches to be switched off to the plurality of FET switches, thereby obtaining a desired tunable capacitance value.

Tunable capacitance control circuit and tunable capacitance control method

There are provided a dual mode communications device and a method of improving a data rate thereof. The dual mode communications device according to the embodiment of the present invention may include a selection unitconnecting antenna terminals to receive terminals or transmit terminals, a receive path circuit unit allowing RF receive signals from each of the first and second antennas to pass therethrough, a transmit path circuit unit providing RF transmit signals to the transmit terminals of the selection unit, an RF circuit unit converting the RF receive signals from the receive path circuit unit into baseband signals and converting the baseband signals to be transmitted into the RF transmit signals, and a baseband circuit unit performing control and signal processing of the selection unit in a single communications mode among a dual mode and a single mode.

Growing community of inventors

Gyunggi-do, South Korea

Jae Hyouck Choi