Samsung Electronics Co., Ltd.

Jae-Hwan Cho

Sangho Lee

Yoosang Hwang

Hui-Jung Kim

Junsoo Kim

Kyujin Kim

A semiconductor device may include active patterns extended in a first direction and spaced apart from each other in the first direction, a device isolation layer defining the active patterns, an insulating structure provided between the active patterns and between the device isolation layer, and a gate structure disposed on the insulating structure and extended in a second direction crossing the first direction. The gate structure may include an upper portion and a lower portion. The lower portion of the gate structure may be enclosed by the insulating structure.

Semiconductor device and method of fabricating the same

Disclosed are semiconductor devices including support patterns and methods of fabricating the same. The semiconductor devices may include a plurality of vertical structures on a substrate and a support pattern that contacts sidewalls of the plurality of vertical structures. The support pattern may include a plurality of support holes extending through the support pattern. The plurality of support holes may include a first support hole and a second support hole that are spaced apart from each other, and the first support hole may have a shape or size different from a shape or size of the second support hole.

Semiconductor devices including support pattern and methods of fabricating the same

Semiconductor device with at least a portion of gate electrode enclosed by an insulating structure and method of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Jae-Hwan Cho