Samsung Electronics Co., Ltd.

Samsung Techwin Co., Ltd.

Samsung Sdi Co., Inc.

Jae-hoon Lee

Jong-woo Lee

Seung-hyun Oh

Chilun Lo

Tae-young Kim

Chan-ho Park

Ki-se Kim

Gi-Gwan Park

Barosaim Sung

Nam-young Lee

Tae-Geun Kim

Jong-mi Lee

Hyun-Jung Her

Jong-Won Lee

Sang-rae Lee

Dae-hee Kim

Seong-Jin Kim

Jong-Sung Kim

Hae-seog Jo

Yong-hee Park

Dong-Su Chang

Jae-hun Lee

Byeong-hu Lee

Jin-yoon Kim

Chan-Ho Park

Sang-deok Kim

Jae-chang Lee

Jeong-kwan Lee

Tai-ryong Kang

Geun-bae Lim

Dae-sung Yoon

Gi-gwan Park

Yi-young Na

Sang-jin Kwon

Yong-ha Kang

A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

Semiconductor device with a fin-shaped active region and a gate electrode

Provided are a device and a method of generating printing information. The method includes acquiring at least one image part by splitting a basic image acquired based on a user input; determining a target article corresponding to the basic image from a three-dimensional (3D) article list stored in a database (DB) by using the at least one image part; providing a graphical user interface (GUI) capable of editing a shape of the target article according to a user input; and editing the shape of the target article, based on a user input via the GUI, and generating printing information used to 3D print the edited target article.

Device for generating printing information and method for generating printing information

Provided are a radio-frequency integrated chip (RFIC) and a wireless communication device including the RFIC. An RFIC configured to receive a carrier aggregated receive signal having at least first and second carrier signals may include first and second carrier receivers configured to generate, from the receive signal, first and second digital carrier signals, respectively. A phase-locked loop (PLL) may output a first frequency signal having a first frequency to the first carrier receiver and the second carrier receiver. The first and second carrier receivers may include first and second analog mixers, respectively, for translating frequencies of the receive signal, using the first frequency signal and the second frequency signal, respectively. Each of the first and second carrier receivers may further include a digital mixer for further translating the frequencies of the receive signal in the digital domain.

Carrier aggregated signal transmission and reception

A radio frequency (RF) integrated circuit is provided. The RF integrated circuit supports carrier aggregation and includes first receiving circuits and a first shared phase locked loop circuit that provides a first frequency signal of a first frequency to the first receiving circuits. One of the first receiving circuits includes an analog to digital converter (ADC) and a digital conversion circuit. The ADC converts an RF signal received by the one of the first receiving circuits to a digital signal by using the first frequency signal. The digital conversion circuit generates a digital baseband signal by performing frequency down conversion on the digital signal.

Radio frequency integrated circuit supporting carrier aggregation and wireless communication device including the same

Provided are a radio-frequency integrated chip (RFIC) and a wireless communication device including the RFIC. An RFIC configured to receive a carrier aggregated receive signal having at least first and second carrier signals may include first and second carrier receivers configured to generate, from the receive signal, first and second digital carrier signals, respectively. A phase-locked loop (PLL) may output a first frequency signal having a first frequency to the first carrier receiver and the second carrier receiver. The first and second carrier receivers may include first and second analog mixers, respectively, for translating frequencies of the receive signal, using the first frequency signal and the second frequency signal, respectively. Each of the first and second carrier receivers may further include a digital mixer for farther translating the frequencies of the receive signal in the digital domain.

A variable feedback gain delta modulator includes group of capacitors commonly connected to a first terminal and are respectively classified into a first capacitor group and a second capacitor group; a comparator for sequentially generating n-bit digital output signals based on a voltage of the first terminal; and a switch group including switches respectively connected to the capacitors, wherein the switches are respectively classified into a first switch group and a second switch group respectively connected to the first capacitor group and the second capacitor group, and the first switch group and the second switch group respectively operate according to a first control signal and a second control signal that are determined based on the n-bit digital output signals and the variable feedback gain.

Delta modulator with variable feedback gain, analog-to-digital converter including the delta modulator, and communication device including the delta modulator

A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate; a gate insulating film covering a top surface and both side walls of the fin-shaped active region; a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film; one pair of insulating spacers on both side walls of the gate electrode; and a source region and a drain region on the substrate and respectively located on sides of the gate electrode. The source region and the drain region form a source/drain pair. The one pair of insulating spacers include protrusions that protrude from upper portions of the one pair of insulating spacers toward the gate electrode.

Semiconductor device including gate having dents and spacer protrusions extending therein

Semiconductor device having a fin-shaped active region and a gate electrode

An analog-to-digital converter includes a sample hold circuit configured to receive an analog input signal based on an operating mode, the operating mode being one of at least two modes including a sample mode and a hold mode. The sample hold circuit includes a first transistor including a control terminal and a first terminal, the first transistor configured to receive a control signal via the control terminal and receive the analog input signal via the first terminal. The analog-to-digital converter further includes a bootstrap switch operationally connected to the control terminal and the first terminal of the first transistor, the bootstrap switch configured to form a first current path from a power source based on the analog input signal and a boosted voltage of the control terminal of the first transistor in the sample mode, the control terminal bing along the first current path in the sample mode.

Analog-to-digital converter and communication device including the same

A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width.

Semiconductor device and method for fabricating the same

A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth. The termination ring region is doped with impurities in the second region of the substrate, is spaced apart from the gate electrode structures, and has a ring shape surrounding the first region, and has the first impurity concentration and the first depth. The semiconductor power device may have a high breakdown voltage.

Semiconductor power devices and methods of manufacturing the same

A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

High-electron-mobility transistor

An automatic test apparatus for embedded software and an automatic testing method thereof, the automatic testing apparatus for embedded software, includes an output detector which collects interface status information in accordance with data transmission/reception from at least one of first and second electronic devices respectively loaded with first and second embedded software and exchanging data therebetween, and extracts a keyword from the collected interface status information, a scenario composer which uses identification information about the first and second embedded software and the extracted keyword, and composes a scenario corresponding to a predetermined event status and a control command generator which generates a control command to reproduce the event status based on the composed scenario. Thus, it is possible to previously detect unpredictable and predictable problems that may occur in interaction between the plurality of embedded software, interface operation to transmit and receive data, etc., and reproduce them.

Automatic testing apparatus for embedded software and automatic testing method thereof

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Suwon-si, South Korea

Jae-hoon Lee