Lam Research Corporation

Korea Advanced Institute of Science and Technology

Jae Hoon Bong

Hyungsuk Alexander Yoon

Byung Jin Cho

Onejae Sul

This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NHF), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NHF); and (b) exposing the graphene to the ammonium fluoride (NHF), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.

Growing community of inventors

Gwangju, South Korea

Jae Hoon Bong