Samsung Electronics Co., Ltd.

Seoul National University

Snu Rdb Foundation

Jae-hong Lee

Hyung-cheol Shin

Hyun-jong Chung

Jin-seong Heo

Jae-ho Lee

Kyung-Eun Byun

David Seo

Seong-jun Park

Hyun-Jae Song

Sun-ae Seo

Sung-Hoon Lee

Hee-jun Yang

Min-Goo Kim

Seung-bum Hong

Min-goo Kim

Sang-Hyuck Ha

Yoon-woo Lee

Jin-Woo Heo

Jun-Soo Kim

Ju-hwan Jung

Jung-Wook Yoon

Seok-Min Hwang

Kwang-man Ok

According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Field effect transistor using graphene

According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.

Graphene switching device having tunable barrier

Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.

Graphene electronic device including a plurality of graphene channel layers

In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.

Semiconductor device including graphene and method of manufacturing the semiconductor device

Provided are an apparatus and a method for receiving PSI/SI in a DVB-H receiver, in which packets carrying PSI/SI are detected from TS packets received over a wireless network and counted, and the PSI/SI packets are read if the packet count number reaches a predetermined packet number.

Method and apparatus for receiving broadcasting service information in a digital broadcasting system

A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.

Semiconductor probe having embossed resistive tip and method of fabricating the same

Disclosed is an apparatus and method for receiving broadcasting data in a digital video broadcasting receiver using Digital Video Broadcasting-Handhelds (DVB-H), the method including detecting section headers carrying broadcasting service information from a received Transport Stream (TS) packet and extracting delta-t information from the section headers, counting the number of extracted delta-t information, comparing the counted number of delta-t information with a predetermined delta-t lock number, and when the counted number is less than the delta-t lock number, counting the start time of a next burst duration based on the delta-t information.

Apparatus and method for receiving broadcasting data in digital video broadcasting receiver

A method for controlling a turbo decoding time in a high-speed packet data communication system. In a mobile communication system which receives a control message from a packet data control channel, at the same time receives packet data from the packet data channel, performs demodulating and turbo-decoding of the packet data during a predetermined response (ACK/NAK) time delay using a demodulation result of the packet data control channel, creates a result of the turbo decoding in the form of a response (ACK/NAK) signal, and transmits the turbo decoding result, the method includes the steps of a) demodulating the control message when simultaneously receiving the control message and the packet data, and demodulating and decoding the packet data, and b) if the response time delay expires while decoding the packet data, interrupting a decoding operation of the turbo decoder.

Method for controlling turbo decoding time in a high-speed packet data communication system

Disclosed is a device and method such that data of size S is stored in a memory of size K, a two-dimensional matrix with R rows and C columns, and interleaving indexes I are generated according to a predetermined interleaving rule to randomly output the data from the memory. If a first index I is greater than data size S, a second index is generated and output prior to outputting invalid data stored in the memory at the location of the first index.

Device and method for minimizing puncturing-caused output delay

A method and an apparatus are provided for generating an (4,20) RLL modulation code having a decreased detectible window width and an increased recording density ratio. The code's spectrum is concentrated in the low-frequency band, thereby improving the signal-to-noise ratio. In addition, the hardware of an encoder and a decoder can be easily implemented since the modulation code has a fixed codeword length.

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Seoul, South Korea

Jae-hong Lee