Samsung Electronics Co., Ltd.

Jae Hong Jung

Kyung Min Lee

Seung Jin Kim

Seung Hyun Oh

Gyu Sik Kim

A phase locked loop circuit and a semiconductor device are provided. The phased locked loop circuit includes a reference current generator configured to generate a summed compensation current in which at least one of a process change, a temperature change or a power supply voltage change are compensated and output the summed compensation current as a reference current, a current digital-to-analog converter configured to convert the reference current into a control current in accordance with a digital code and a voltage control oscillator configured to generate a signal based on the control current, wherein the summed compensation current is based on weighted-averaging a first type compensation current and a second type compensation current in response to at least one of the process change, the temperature change or the power supply voltage change.

Phase locked loop circuit and semiconductor device including the same

A clock generating circuit includes a first frequency multiplier configured to generate a second clock signal having a second frequency based on a first clock signal having a first frequency, and a second frequency multiplier configured to generate a third clock signal having a third frequency based on the second clock signal. The first frequency multiplier includes a circuit configured to control a duty cycle of the first clock signal, a delay circuit configured to receive the duty controlled clock signal, and delay the received signal based on a duty cycle of the second clock signal to output a first delay clock signal, and an XOR gate configured to perform an XOR computation using the duty controlled clock signal and the first delay clock signal to output the second clock signal. The second frequency is greater than the first frequency, and the third frequency is greater than the second frequency.

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Suwon-si, South Korea

Jae Hong Jung