Samsung Electronics Co., Ltd.

Sk Siltron Co., Ltd.

Jae-Ho Song

Young-Hoon Park

Won-Je Park

Byung-Wook Kim

Se-Jin Kim

Myung-Hoon Yeon

Chan Jae Park

Kyung-Hwan Lee

Jong-wook Hong

Doo-Hee Lee

Seong-Joon Kim

Keo-sung Park

Sang-Hak Shin

Won-je Park

Jin-Hyeong Park

Woo-Yong Lee

Jung-Ho Park

Byoung-Jae Bae

Sang-il Jung

Tae-Seok Oh

Young-hoon Park

Dong-Kun Lee

Young-Jae Choi

Do-Young Lee

Dae-cheol Seong

Kye-Jin Lee

Jung-Hyun Eum

Chan-Young Kim

Eun-soo Kim

Jeong-Hoon Bae

Kwang-Yong Choi

Chung-Ho Shin

Tae-Il Eom

Woon-Haing Hur

Jin-Kyu Hong

Won-jeong Lee

Pu-ra Kim

A method for operating a terminal in a wireless communication system is provided. The method includes at least one of transmitting data to and receiving data from a primary cell using a first Radio Frequency (RF) path, and, when a secondary cell is deactivated, operating a second RF path to perform searching and measurement with respect to at least one target cell at a frequency different from a frequency of the primary cell.

Apparatus and method for managing measurement gap in wireless communication system

A method of developing software including a plurality of actors executable in parallel includes obtaining first input data including information regarding a plurality of procedures defining a series of messages between a first actor and at least one second actor from among the plurality of actors, obtaining second input data including information regarding relationships between the plurality of procedures, generating control data by interpreting the first and second input data, and controlling the plurality of procedures by processing the series of messages using the control data.

System and method for software development based on procedures

A measurement method by a user equipment (UE) including receiving a first measurement list from a base station, the first measurement list including one or more measurement candidates, and measuring signal quality of at least some of the one or more measurement candidates independent of corresponding one or more measurement periods, the one or more measurement periods being periods determined for the at least some of the one or more measurement candidates may be provided.

Method and apparatus for performing measurement in wireless communication system

Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.

Semiconductor substrate for controlling a strain

A method and apparatus of searching for an operator network in a multi-Radio Access Technology (RAT) environment are provided. The method, calculating a length of a sleep interval to perform background Public Land Mobile Network (PLMN) searching, comparing the length of the sleep interval with a predetermined reference parameter, if the length of the sleep interval is larger than the reference parameter, performing background PLMN searching of a passive RAT during the sleep interval, and if the length of the sleep interval is equal to or smaller than the reference parameter, performing background PLMN searching of an active RAT during the sleep interval.

Method and apparatus of searching for operator network in a multi-radio access technology environment

A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.

Image sensors with lightly doped drain (LDD) to reduce dark current

Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.

Image sensor with self-boosting transfer transistor gate and methods of operating and fabricating the same

Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

Image sensor and method of manufacturing the same

Methods of fabricating image sensors and image sensors fabricated thereby

An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

Image sensor and fabrication method thereof

An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.

Image sensor and related fabrication method

Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffusion coefficient. Therefore, dark defects of the image sensor are reduced. In addition, the image sensor includes a color-ratio control layer. The color ratio control layer controls color ratios between the sensitivities to blue, green and red. As a result, color distinction of the picture that is embodied by the image sensor can be improved.

Image sensor and method of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Jae-Ho Song