Samsung Electronics Co., Ltd.

Korea Electronics Technology Institute

Jae-ho Kim

Kyoung-mi Kim

Young-ho Kim

Yeu-Young Youn

Shi-Yong Yi

Boo-deuk Kim

Hyo-Jin Yun

Hyun-sub Kil

Do-Young Kim

Myung-Sun Kim

Sang-Mun Chon

Kwang-sub Yoon

Baik-soon Choi

Sang-Kyu Park

Jeong-ju Park

Hyuck Kim

Seung-Hyun Ahn

Dae-Joung Kim

Eun-Mi Bae

Se-kyung Baek

Chang-Ho Lee

Dong-jun Lee

Sang-Shin Lee

Keita Kato

Seok Min Han

Yool Kang

Dong-In Ha

Atsushi Nakamura

Jung-sik Choi

Kwang-Ho Won

Mi-ra Park

Young-Gil Kwon

Soo-Kyung Kim

Youn-Kyung Wang

Jin-A Ryu

Hyung-rae Lee

Si-Young Lee

Il-Yeup Ahn

Sang-Woong Yoon

Hyoung-hee Kim

Min-Hwan Song

Hun-Jong Jeong

Min-Woo Ryu

Bo-Hee Lee

Soo-jin Lee

Boo-Deuk Kim

In-Chull Yang

Suk-Koo Hong

Shi-Yong Lee

Ji-Yun Ham

Jae-Seok Yoon

A method of forming a fine pattern includes forming a phase separation guide layer on a substrate, forming a neutral layer on the phase separation guide layer, forming a first pattern including first openings on the neutral layer, forming a second pattern including second openings each having a smaller width than each of the first openings, forming a neutral pattern including guide patterns exposing a portion of the phase separation guide layer by etching an exposed portion of the neutral layer by using the second pattern as an etch mask, removing the second pattern to expose a top surface of the neutral pattern, forming a material layer including a block copolymer on the neutral pattern and the phase separation guide layer exposed through the guide patterns, and forming a fine pattern layer including a first block and a second block on the neutral pattern and the phase separation guide layer.

Method of forming a fine pattern by using block copolymers

A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches.

Method of fabricating semiconductor device

An image forming apparatus having a file-format conversion function and a method thereof. The image forming apparatus is capable of performing a data communication with an external memory device. The image forming apparatus includes an interface unit to receive a first file from the external memory device and to transmit a second file to the external memory device, and a file converter to convert a format of the first file from a first format into a second format according to information on the first and second files. Thus, the format of the received file can be converted in the image forming apparatus in a simple and speed way.

Image forming apparatus and method of file conversion

A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same

A method for controlling a multi-sink/multi-path routing sensor network and a sensor network system using the same are provided. The method for controlling the sensor network includes generating, at a sensor node, sensing data; transmitting, at the sensor node, the sensing data to a plurality of sink nodes; and forwarding, at the sink nodes receiving the sensing data from the sensor node, the sensing data to a gateway. Hence, it is possible to satisfy the reliability required in the safety-critical system with the minimum traffic. Both of the two conflicting requirements which are the reliability enhancement of the sensor network and the minimization of the network traffic in the repeated data transmission, can be satisfied adequately.

Method for controlling multi-sink/multi-path routing sensor network and sensor network using the same

A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

Methods of manufacturing semiconductor devices using photolithography

A device and method of editing documents created in different application programs and stored in a storage unit of a printer to create a new document according to a minimum unit.

Device to edit documents for printout and method thereof

In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern including a siloxane polymer. The conductive layer on the oxide layer pattern is selectively removed using the buffer layer pattern as an etching mask. A conductive pattern having a cylindrical shape can be formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

Methods of forming a pattern and methods of manufacturing a capacitor using the same

The present invention relates to a folder or hinge type portable terminal having a grounding unit. A main body has a main board. A folder opens and closes at an angle from the main body. At least one component of a hinge module is formed of a metallic material, and opens and closes the folder at an angle from the main body. A connecting means selectively contacts a grounding portion of the main board to the material components of the hinge module in response to the opening and closing operation of the folder, to provide optimal antenna radiation characteristic irrespective of the opening and closing operation of the folder.

Folder type portable terminal with variable-type grounding unit

A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Thinner composition and method of removing photoresist using the same

In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.

Photoresist compositions and methods of forming a pattern using the same

Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.

Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition

Growing community of inventors

Yongin-si, South Korea

Jae-ho Kim