Sungkyunkwan University

Jae Ho Jeon

Sung Joo Lee

Jin Hong Park

Jeong Ho Cho

Hae Ju Choi

Hyeon Je Son

Min Je Kim

Seung Hyuk Choi

A negative transconductance device is disclosed. The negative transconductance device includes a first transistor having a P-type semiconductor channel, a second transistor having an N-type semiconductor channel, and a third transistor having an ambipolar semiconductor channel and positioned between the first and second transistors. A first drain electrode of the first transistor is electrically connected to a third source electrode of the third transistor, and a drain electrode of the third transistor is electrically connected to a second source electrode of the second transistor.

Negative transconductance device and multi-valued inverter logic device using the same

Disclosed is a photodetector in which a plurality of conductive stripes spaced apart from each other are bonded onto a two-dimensional semiconductor thin-film, and a pitch between adjacent conductive stripes is controlled to selectively adjust a plasmonic resonance wavelength zone, such that the photodetector has a high absorbance and a wide detection zone at the same time. Further, a manufacturing method thereof is disclosed. The photodetector includes a semiconductor thin-film; and a plurality of conductive stripes bonded onto the semiconductor thin-film and extending in a parallel manner to each other and spaced apart from each other.

Photodetector and method of manufacturing the photodetector

Growing community of inventors

Bucheon-si, South Korea

Jae Ho Jeon