Skhynix Inc.

Jae Hee Song

Ki Vin Im

Dong Hyun Lee

Cheol Hwan Park

Kyung Woong Park

Wan Joo Maeng

Lynn Lee

The present invention relates to a semiconductor device having a capacitor and a method for fabricating the same. A semiconductor device may comprise: a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed over the lower electrode and the supporter; an upper electrode formed on the dielectric layer; and a dielectric booster layer disposed between the lower electrode and the dielectric layer, and selectively formed on a surface of the lower electrode.

Semiconductor device and method for fabricating the same

A semiconductor device includes a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an upper electrode on the dielectric layer; a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and a second interfacial layer disposed between the dielectric layer and the upper electrode, wherein the first interfacial layer is a stack of a metal oxide contacting the lower electrode and a metal nitride contacting the dielectric layer.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Gyeonggi-do, South Korea

Jae Hee Song