Skhynix Inc.

Jae Hee Sim

Keun Kyu Kong

Min Seok Son

Jeong Hoon An

Sung Koo Lee

Si Hyun Kim

Ji Sok Lee

A method for forming a planarization layer includes: providing a substrate including a trench; coating a pre-thinner over a surface of the trench; forming a gap-filling material in the trench; coating a post-thinner over the gap-filling material; and performing a spinning process to rotate the substrate.

Method for forming planarization layer and pattern forming method using the same

A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.

Semiconductor integrated circuit device with a surface and method of manufacturing the same

A wafer processing apparatus includes a particle charger for charging particles adsorbed onto a wafer with photoelectrons emitted from an emitter metal layer and a particle remover for applying an electric field to the wafer, which removes the charged particles from the wafer.

Growing community of inventors

Cheongju, South Korea

Jae Hee Sim