Seoul Viosys Co., Ltd.

Seoul Semiconductor Co., Ltd.

Jae Hee Lim

Jong Min Jang

Namgoo Cha

Motonobu Takeya

Jong Ik Lee

Seung Sik Hong

Chae Hon Kim

Jong Hyeon Chae

Sang Min Kim

Chang Youn Kim

Seong Su Son

Seongchan Park

Chung Hoon Lee

Chang Yeon Kim

Sangmin Kim

Sung Su Son

Seon Min Bae

Yeonkyu Park

Jung Hwan Ahn

Jong Kyun You

Da Hye Kim

Jinkyu Jang

A wafer for fabricating a unit pixel is provided. The wafer includes a transparent substrate, and a light blocking layer disposed on the transparent substrate. The light blocking layer includes a plurality of unit pixel regions and at least one observation region. Each of the unit pixel regions has a mounting region for mounting a light emitting device, and the observation region includes the mounting region for mounting the light emitting device and an auxiliary pattern disposed around the mounting region.

Wafer having auxiliary pattern for aligning light emitting device and method of fabricating unit pixel using the same

A unit pixel according includes a transparent substrate, a plurality of light emitting devices disposed on the transparent substrate, and an adhesive layer disposed between the light emitting devices and the transparent substrate to bond the light emitting devices. The adhesive layer is sealed inside the unit pixel.

Unit pixel having light emitting device and displaying apparatus

A displaying apparatus includes a pixel unit. The pixel unit includes at least one pixel having a light emitting device and a light conversion layer for converting a first wavelength of light of the light emitting device into a second wavelength of light different from the first wavelength; and an insulation layer covers side surfaces of the light emitting device and the light conversion layer.

Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device

A unit pixel and a displaying apparatus including the unit pixel are provided. The unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, a light blocking layer disposed between the transparent substrate and the light emitting devices, and having at least one window, and a semi-transmissive layer disposed between at least one of the plurality of light emitting devices and the transparent substrate to overlap with the window at least partially.

Unit pixel and displaying apparatus including the unit pixel

A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, and an optical layer disposed between the light emitting devices and the transparent substrate and transmitting light emitted from the light emitting devices. The transparent substrate has a concavo-convex pattern on a surface facing the light emitting devices.

A unit pixel includes a transparent substrate, a plurality of light emitting devices disposed on the transparent substrate, and an electrostatic discharge (ESD) protector disposed on the transparent substrate and protecting at least one of the light emitting devices from electrostatic discharge.

Unit pixel having light emitting devices and display apparatus having the same

A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, connection layers electrically connected to the light emitting devices, and bonding pads disposed over the connection layers and electrically connected to the connection layers. The bonding pads are partially overlapped with at least one of the light emitting devices in a vertical direction, respectively.

A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.

Light emitting diode having side reflection layer

A display apparatus including a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the substrate and configured to emit red light, green light, and blue light, respectively, partition walls disposed between the first sub-pixel, the second sub-pixel, and the third sub-pixel, and configured to not transmit light, in which the first sub-pixel, the second sub-pixel, and the third sub-pixel include a first light emitting cell, a second light emitting cell, and a third light emitting cell, respectively, and a height of each of the first, second, and third light emitting cells is lower than a height of the partition walls, and a difference between the height of the partition walls and the height of each of the first, second, and third light emitting cells is less than 100 &#x3bc;m.

Light emitting device and display apparatus including the same

A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 &#x3bc;m or more.

A displaying apparatus including: a panel substrate; a plurality of light emitting devices arranged on the panel substrate; and at least one connection tip disposed on one surface of each of the light emitting devices. Each of the light emitting devices includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers; and first and second electrode pads disposed on the light emitting structure.

Growing community of inventors

Ansan-si, South Korea

Jae Hee Lim