Dongbu Electronics, Co. Ltd.

Samsung Electro-Mechanics Co., Ltd.

Korea Railroad Research Institute

Jae Hee Kim

Ji Hong Jo

Jae Ho Lee

Chi Hyung Ahn

Seok Kyoon Woo

Won Hee Yoo

Sung Soo Park

Kyeong Jun Ko

Seh Chan Oh

Jung Tai Kim

Sang Hoon Chang

A conductive powder for an internal electrode includes a metal particle and a graphene oxide disposed on at least a portion of a surface of the metal particle. A content of the graphene oxide is less than 1.0 weight percent, based on a weight of the metal particle.

Conductive powder for internal electrode and capacitor component including the same

An apparatus and method for protecting a communication device of a railroad car is provided. The apparatus includes an antenna portion configured to include main antennas and an auxiliary antenna, a main receiver configured to check a magnitude of a received signal transferred through the main antennas of the antenna portion, an auxiliary receiver configured to check a magnitude of a received signal transferred through the auxiliary antenna of the antenna portion, and a controller configured to compare the magnitude of the signal received by the main receiver and the magnitude of the signal received by the auxiliary receiver, determine whether there is a jamming signal according to a comparison result, and take a preset countermeasure when it is determined that there is a jamming signal.

Apparatus and method for protecting communication device of railroad car

Methods for protecting semiconductor devices from plasma charging damage are disclosed. An example disclosed method includes depositing an etching stop layer on a substrate with at least one predetermined structure; depositing a premetallic dielectric layer and a charge preservation layer on the entire surface of the etching stop layer; depositing an insulating layer on the surface of the resulting structure; and forming an metallic interconnect on the insulating layer.

Devices and methods of preventing plasma charging damage in semiconductor devices

A method for fabricating a semiconductor device includes the steps of sequentially forming a pad oxide layer and a pad nitride layer on a substrate, the pad oxide layer including a first oxide layer formed on an upper surface of the substrate and a second oxide layer formed on a lower surface of the substrate, and the pad nitride layer including a first nitride layer formed on the upper surface of the substrate and a second nitride layer formed on the lower surface of the substrate; patterning the first nitride layer by removing a portion of the first nitride layer; forming a trench in the substrate corresponding to the removed portion of the first nitride layer, thereby patterning the first oxide layer; filling the trench with an insulating material to form a device isolation layer; forming a passivation layer on the substrate, the passivation layer including a first passivation layer formed on the upper surface of the substrate including the device isolation layer, and a second passivation layer formed on the lower surface of the substrate including the second oxide layer and the second nitride layer; and removing the first passivation layer, the patterned first oxide layer, and patterned first nitride layer.

Method for fabricating semiconductor device

Growing community of inventors

Suwon-si, South Korea

Jae Hee Kim