Samsung Electronics Co., Ltd.

Jae-Hee Choi

Young-ho Kim

Hyo-Jin Yun

Do-Young Kim

Hong-Ki Kim

June-Taeg Lee

Boo-deuk Kim

Young-Gil Kwon

Sang-Woo Pae

Jin-A Ryu

Ho-Kyu Kang

Jong-wook Jeon

Ji-Man Park

Hyun-chul Sagong

Seung-Jin Choo

Se-Kyung Baek

A semiconductor device includes a first fin pattern, which includes a first lower pattern and a first upper pattern stacked sequentially on a substrate, the first upper pattern including a first part and second parts respectively disposed on both sides of the first part, a gate electrode, which is formed on the first part to intersect the first fin pattern, and source/drain regions, which are formed on the second parts, respectively. A dopant concentration of the first upper pattern is higher than a dopant concentration of the first lower pattern and a dopant concentration of the substrate, and the dopant concentration of the first lower pattern is different from the dopant concentration of the substrate.

Semiconductor device including a fin pattern

Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.

Image sensor having moisture absorption barrier layer, fabricating method thereof, and device comprising the image sensor

In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Methods of forming a pattern of a semiconductor device

A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.

Photoacid generators, photoresist composition including the same and method of forming pattern using the same

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Bucheon-si, South Korea

Jae-Hee Choi