Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Rensselaer Polytechnic Institute

Jae-hee Cho

Jong-kyu Kim

Martin F Schubert

Hyun-Jeong Kang

Hyun-Soo Kim

Jung-Je Son

E Fred Schubert

Hyun-gi Hong

Jae-young Choi

Won-Il Roh

Cheol-soo Sone

Joon-seop Kwak

Kwang-ki Choi

Dong-yu Kim

Seok-soon Kim

Seoung-jae Im

June-o Song

Frank Wilhelm Mont

Byung-Ki Kim

Jeong-wook Lee

Eun-Sung Lee

Tae-yeon Seong

Kyu-ho Shin

Hyung-kun Kim

Youn-joon Sung

Suk-ho Yoon

Dong-seok Leem

Ho-sun Paek

Eun-joo Jang

Yong-jo Park

Luo Hong

Hye-jeong Oh

A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Light emitting diode and method for fabricating the same

A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.

Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer

A backlight unit for a liquid crystal display (LCD) using a light emitting diode (LED) is provided. The backlight unit includes a blue light source, a red light source, and a green light source. The green light source includes an ultraviolet (UV) LED and a green phosphor excited by light emitted from the UV LED.

Backlight unit for LCD using LED

A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.

Projection system employing semiconductor diode

Provided is a method of forming a fine pattern having a pattern dimension of 1 &#x3bc;m or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.

Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern

Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer.

Vertical semiconductor light-emitting device and method of manufacturing the same

A LED device is provided having a diffuse reflective surface which includes an LED chip emitting light, a reflector cup having the LED chip arranged at a bottom surface thereof and having an angled surface which diffusely reflects the light emitted by the LED chip, and a light conversion material provided in the reflector cup for converting the light emitted by the LED chip into visible light rays. The light-conversion material is spatially separated from the LED chip by a length equal or greater than the maximum length of the LED chip.

LED device having diffuse reflective surface

Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

Light emitting device and method of manufacturing the same

Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

Light-emitting device and method of manufacturing the same

A photo-luminescent liquid crystal display (PL LCD) includes: a light control unit which includes a liquid crystal (LC) layer modulating the UV light and electrodes driving the LC layer; and a light emitting layer which emits light by the UV light transmitted through the light control unit. The light emitting layer includes inorganic phosphors and semiconductor quantum dots (QDs) having a quantum confinement effect. The PL LCD includes adding QDs having a high quantum efficiency into luminescent substances having lower light utilization efficiency than other colors, for example, red phosphor having very low quantum efficiency to improve the light utilization efficiency, thereby improving the color balance.

Photo-luminescent liquid crystal display

A GaN-based compound semiconductor light emitting device is provided. The semiconductor light emitting device includes a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer; a p-type electrode formed on the p-type semiconductor layer; an n-type electrode formed on a second region separated from the first region of the n-type semiconductor layer; a dielectric layer formed on a sidewall of a stack comprising the p-type semiconductor layer, the active layer, and the n-type semiconductor layer; and a reflective layer formed on the dielectric layer.

GaN-based compound semiconductor light emitting device

In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

Light emitting diodes and display apparatuses using the same

Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.

Growing community of inventors

Yongin-si, South Korea

Jae-hee Cho