Samsung Electronics Co., Ltd.

International Business Machines Corporation

Chartered Semiconductor Manufacturing Ltd (corporation)

Jae Hak Kim

Seung Jin Lee

Seung Yong Yang

Sun Jung Lee

Byoung Mok Kim

Tong Qing Chen

Yi-Hsiung Lin

Seong Woo Kim

Wan Jae Park

A refrigerator includes a first door that is rotatably provided so as to open/close a storage compartment, a second door that is rotatably provided in the front of the first door so as to open/close the first door, and a door anti-opening unit that prevents or allows opening of the second door depending on whether the first door is opened or closed. The door anti-opening unit prevents the second door from being unintentionally opened when the first door is opened.

Refrigerator having double doors

Exemplary embodiments of the invention generally include methods for forming multilayer metal interconnect structures using dual damascene methods that incorporate a via capping process to protect lower interconnection lines from etching damage or oxidation, for example, that may be caused by inadvertent exposure of lower interconnection lines to etching atmospheres.

Methods for forming dual damascene wiring for semiconductor devices using protective via capping layer

Methods of forming electrical interconnect structures include forming a dielectric layer on a semiconductor substrate and forming a hard mask layer on the dielectric layer. A photoresist layer is patterned on an upper surface of the hard mask layer. This patterned photoresist layer is used as an etching mask during a step to selectively etch the hard mask layer and define an opening therein. This opening exposes the first dielectric layer. The patterned photoresist layer is then stripped from the hard mask layer using an ashing process that exposes the upper surface of the hard mask layer. Following this ashing process, a portion of the first dielectric layer extending opposite the opening is selectively etched using the hard mask layer as an etching mask. During this selective etching step, polymer residues are accumulated directly on the upper surface of the hard mask layer. These polymer residues may operate to increase a degree of selectively and inhibit recession of the hard mask layer during the step of selectively etching the first dielectric layer.

Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers

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Fishkill, NY, United States of America

Jae Hak Kim