Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Jae-Goo Lee

Min-Woo Lee

Young-Mo Koo

Won-sik Kang

Jae-hyuck Woo

Young-Woo Park

Tae-Young Chung

Ok-Keun Song

Woo-Sik Jeon

Cheol-Ju Yun

Chang-hyun Cho

Sung-Jin Choi

Gwan-Hyeob Koh

Doo-Hwan Kim

Jae-Duk Lee

Chang-Hyun Cho

Jae-Hyuck Woo

Chang-seok Kang

Dong-Sik Lee

Hye-In Jeong

Jae-Kyu Lee

Byung-Kwan You

Chul Jun Choi

Jin-taek Park

In-Suk Kim

Jong-won Kim

Yong-Han Lee

Ju-Yong Lee

Sang-yong Park

Dong-Hyun Kim

Kohji Kanamori

Je-Min Park

Dong-Jun Lee

Tae-Shick Kim

Hyeong-sun Hong

Jung-dal Choi

Sang-sup Jeong

Chang-Jin Kang

Jae-kyu Lee

Sang-Joon Park

Sung-Un Kwon

Choong-Sun Shin

Jin-Soo Lim

Kyu-Hyun Lee

Hong-Sik Jeong

Chul Ho Jung

Hee-Sun Ahn

Hyuk-Sang Jun

Nam-Jung Kang

Seung-Gun Lee

Byung-Hun Han

In-Bok Song

Byung-hun Han

Chan-Ouk Jung

Ho-Suk Lee

Ki-Bum Kim

Im-Soo Kang

Young-Uk Won

Moo-Rym Choi

In-suk Kim

Im-soo Kang

Jong-Han Choi

Sang-Sup Jeong

Chung-Jin Kim

Chang-wook Park

Young-hyun Jun

An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.

Organic light-emitting device

A non-volatile memory device is provided. The non-volatile memory device includes a channel structure that is located on a substrate and extends perpendicularly to the substrate, a conductive pattern that extends perpendicularly to the substrate and is spaced apart from the channel structure, an electrode structure that is located between the channel structure and the conductive pattern, and comprises a plurality of gate patterns and a plurality of insulation patterns that are alternately laminated. An insulating layer that contacts with a top surface of the conductive pattern is formed along side surfaces of the electrode structure. The top surface of the conductive pattern is formed to be lower than the top surface of the channel structure.

Non-volatile memory device

A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.

Vertical semiconductor device

A method of fabricating a memory device includes alternately stacking a plurality of insulating layers and a plurality of sacrificial layers on a substrate, forming a channel hole by etching the insulating layers and the sacrificial layers to expose a partial region of the substrate, forming a channel structure in the channel hole, forming an opening by etching the insulating layers and the sacrificial layers to exposed a portion of the substrate, forming a plurality of side openings that include first side openings and a second side opening by removing the sacrificial layers through the opening, forming gate electrodes to fill the first side openings, and forming a blocking layer to fill the second side opening.

Method of fabricating memory device

A semiconductor device is provided. Word lines are formed on a substrate. An air gap is interposed between two adjacent word lines. A channel structure penetrates through the word lines and the air gap. A memory cell is interposed between each word line and the channel structure. The memory cell includes a blocking pattern, a charge trap pattern and a tunneling insulating pattern. The blocking pattern conformally covers a top surface, a bottom surface, and a first side surface of each word line. The first side surface is adjacent to the channel structure. The charge trap pattern is interposed only between the first side surface and the channel structure.

Semiconductor device having vertical channel and air gap, and method of manufacturing thereof

An apparatus for compensating for a skew is provided between data signals supplied through a plurality of data lines and a clock signal supplied through a clock line. A skew compensation apparatus includes a plurality of data receivers each configured to delay a data signal supplied through a corresponding data line based on associated phase difference data and to output the delayed data signal, a clock receiver configured to receive a clock signal supplied through a clock line, and a phase controller configured to select any one of the plurality of data receivers and to output, to the selected data receiver, a phase control signal configured to correct the phase difference data of the selected data receiver based on the phase difference between a data signal output from the selected data receiver and the clock signal.

Apparatus for compensating for skew between data signals and clock signal

In an aspect, an organic light-emitting display apparatus including: a substrate; at least one color filter formed on the substrate; an overcoat layer covering the at least one color filter; a first passivation layer formed on the overcoat layer; a light scattering layer formed on the first passivation layer; a first electrode formed on the light scattering layer; a second electrode facing the first electrode; and an organic layer located between the first and second electrodes is provided.

Organic light-emitting display apparatus and method of manufacturing the same

A thin film transistor array panel according to an exemplary embodiment includes: a substrate; a thin film transistor positioned on the substrate; a first electrode connected to the thin film transistor; and a diffractive layer positioned between the substrate and the thin film transistor. The diffractive layer is positioned within a boundary line of semiconductors of the thin film transistor.

Thin film transistor array panel and organic light emitting diode display including the same

A vertical type semiconductor device includes a pillar structure protruding from a top surface of a substrate of a cell array region. Word lines extend while surrounding the pillar structure. Word line contacts contact edges of the word lines functioning as pad portions. An insulating interlayer pattern is provided on the substrate of a peripheral circuit region, which is disposed at an outer peripheral portion of the cell array region. A first contact plug contacts the substrate of the peripheral circuit region. A second contact plug contacts a top surface of the first contact plug and has a top surface aligned on the same plane with the top surfaces of the word line contacts. The first and second contact plugs are stacked in the peripheral circuit region, so the failure of the vertical type semiconductor device is reduced.

Vertical type semiconductor device and method for manufacturing the same

A voltage stabilizer circuit for alternately or simultaneously stabilizing first and second generated voltages includes shared capacitor connected between the first and second generated voltages. The voltage stabilizer circuit may further include first and second switches for alternately connecting the first and second electrode of the shared capacitor to a ground. The alternation of the stabilized first and second voltages output by the voltage stabilizer circuit can be synchronized with a pixel polarity inversion mode signal output by the internal driver circuit of an LCD display.

Share-capacitor voltage stabilizer circuit and method of time-sharing a capacitor in a voltage stabilizer

An organic light emitting diode device includes a first electrode and a second electrode facing each other, a charge-generating layer interposed between the first electrode and the second electrode, a first light emitting unit that emits blue and is interposed between the first electrode and the charge-generating layer, and a second light emitting unit that emits white by combining the blue and is interposed between the second electrode and the charge-generating layer. The first light emitting unit includes a blue emission layer, a first charge transport layer disposed on one side of the blue emission layer and including an alkali metal complex compound and a first charge transport material, and a second charge transport layer disposed on one side of the first charge transport layer and including the alkali metal complex compound and a second charge transport material that has different charge mobility from the first charge transport material.

Organic light emitting diode device

An organic light emitting diode (OLED) lighting apparatus includes a light emitting panel including an organic light emitting diode, a housing for housing the light emitting panel, a cover coupled to the housing and covering a front-side edge of the light emitting panel, a plurality of pins disposed between the housing and the light emitting panel and supporting an edge of the light emitting panel, and at least one contact bar disposed between the plurality of pins and a back-side edge of the light emitting panel.

Organic light emitting diode lighting apparatus

Growing community of inventors

Yongin-si, South Korea

Jae-Goo Lee